Inelastic electron tunneling spectroscopy of amorphous SiOx barriers

Abstract

Inelastic electron tunneling spectroscopy (IETS) is used to record the vibrational spectra of thin films of amorphous SiO, prepared by radio-frequency planar magnetron sputter deposition in argon. The SiO, films are incorporated as the insulating barriers in aluminium SiO,/lead tunnel junctions, with no prior or subsequent oxidation of the aluminium films. Peak assignments are presented by comparison with infrared, Raman, and neutron scattering data for bulk silica, and a plausible stoichiometry is proposed. The SiO, barriers can be considered as model glass substrates for further adsorption studies, and hence extend the analytical capabilities of IETS. 3703

Characterization of Metal Oxide Surfaces and Thin Semiconductor Films by Inelastic Electron Tunneling Spectroscopy

“…The structures and properties of these thin evaporated semiconductor films have been studied. 20,21,[103][104][105][106][107][108][109][110][111][112][113][114][115][116][117][118][119] Tunneling spectra of oxides grown on Si wafers were also reported. [120][121][122][123][124][125] …”

“…Though they studied tunneling spectra of various adsorbed species on these surfaces, detailed analysis and assignments for the species in the Si and SiO2 films were not made. Mallik et al [116][117][118] measured the tunneling spectra of the SiO and SiO2 films prepared by radio-frequency sputter deposition on Al or Au in argon. The tunneling spectra of the SiO films showed the peaks of OxSiH at 2230 and 900 cm -1 .…”