Inelastic electron scattering mechanisms in clean aluminum films

Santhanam, P.; Prober, D. E.

doi:10.1103/physrevb.29.3733

Cited by 119 publications

(53 citation statements)

References 18 publications

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“…The values for inelastic scattering correspond to measurements by Santanam et al, 55 who found in ϭ0.2-1.0 ns in 10-nm Al films at 4.2 K, and Van Son et al 54 who found in ϭ0.8-0.9 ns in 7-nm Al films at T cAl . Our values of in ϭ0.9 ns at 1.6 K and 0.3 ns at 4.2 K indicate a scaling with T Ϫ1 rather than T Ϫ3 , which was found and discussed as well by Santanam et al 55 Note that the values for the inelastic scattering are much smaller than k B T, which means that the stationary properties are not influenced by in .…”

Section: Application: the Nature Of The Intrinsic Shuntsupporting

confidence: 88%

Microscopic nonequilibrium theory of double-barrier Josephson junctions

et al. 2003

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We study nonequilibrium charge transport in a double-barrier Josephson junction, including nonstationary phenomena, using the time-dependent quasiclassical Keldysh Green's function formalism. We supplement the kinetic equations by appropriate time-dependent boundary conditions and solve the time-dependent problem in a number of regimes. From the solutions, current-voltage characteristics are derived. It is understood why the quasiparticle current can show excess current as well as deficit current and how the subgap conductance behaves as function of junction parameters. A time-dependent nonequilibrium contribution to the distribution function is found to cause a nonzero averaged supercurrent even in the presence of an applied voltage. Energy relaxation due to inelastic scattering in the interlayer has a prominent role in determining the transport properties of double-barrier junctions. Actual inelastic scattering parameters are derived from experiments. It is shown as an application of the microscopic model, how the nature of the intrinsic shunt in double-barrier junctions can be explained in terms of energy relaxation and the opening of Andreev channels.

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Section: Application: the Nature Of The Intrinsic Shuntsupporting

confidence: 88%

Microscopic nonequilibrium theory of double-barrier Josephson junctions

et al. 2003

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“…24 The sample fabrication has already been described in detail elsewhere. 31 The measurements were performed in a 3 He/ 4 He dilution refrigerator. The electrons in the SOI film were heated above the lattice temperature by electric current.…”

Section: Samples and Thermometrymentioning

confidence: 99%

“…The possible acoustic mismatch is negligible between heavily doped silicon and SiO 2 due to the acoustic similarity of these materials and it is reasonable to assume that electrons interact with 3D phonons. Heavily doped Si investigated in the present work is in the dirty limit at subKelvin temperature and the phonon system has a complete phonon drag, therefore according to the theory 5,27,29 the electronphonon interaction relaxation time e-ph Ϫ1 is supposed to be proportional to T 4 .…”

Section: Introductionmentioning

confidence: 98%

Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Kivinen¹,

Savin²,

Zgirski³

et al. 2003

Journal of Applied Physics

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Articles you may be interested in Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 90, 866 (2001) Electron-phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T 6 . Utilization of a superconductor-semiconductor-superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann-Franz law.

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“…In Section VI.B we identified the source of the resistivity in the superconducting state as being due to the position-dependent density n f (x) and movement of free vortices due to the Lorentz force. In this analysis we have simplified the description by working with a local electron temperature and a local density (Santhanam and Prober, 1984). The electron-electron scattering length is defined as Λee = √ Dτee, and the coherence length ξ given by √ ξ0l…”

Section: Distributed Superconducting Order Parameter Model: If Banmentioning

confidence: 99%

“…In interpreting the results demonstrated for HEBs of different materials under these bias conditions, we first need to take into account the length L of the device in comparison to the characteristic lengths for the microscopic processes. A summary of relevant length scales for different materials is given in Table III, mainly provided to facilitate a translation from aluminum results to an application to niobium-nitride devices. Aluminium has a very long coherence length and a very long electron-electron interaction length, of the order of 1 µm (depending on temperature and resistance per square (Santhanam and Prober, 1984)). Hence, one can easily be in the regime L << ξ, Λ ee , like in the case of hot-electron bolometers studied by Prober 21 (Prober, 1993) and Siddiqi et al (Siddiqi et al, 2002).…”

Section: Distributed Superconducting Order Parameter Model: If Banmentioning

confidence: 99%

Engineering Physics of Superconducting Hot-Electron Bolometer Mixers

Klapwijk

Semenov

2017

IEEE Trans. THz Sci. Technol.

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Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good quality superconductor-insulator-superconductor (SIS) devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal metal-superconductor bilayer, connected to a thin film of a narrow, short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of localoscillator power. Despite this technological simplicity its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge conversion resistance occurring at an normal-metal-superconductor interface and a resistance due to timedependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a non-uniform superconducting environment set up by the bias-conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy-relaxation rate. Meanwhile several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.

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Inelastic electron scattering mechanisms in clean aluminum films

Cited by 119 publications

References 18 publications

Microscopic nonequilibrium theory of double-barrier Josephson junctions

Microscopic nonequilibrium theory of double-barrier Josephson junctions

Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

Engineering Physics of Superconducting Hot-Electron Bolometer Mixers

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