1986
DOI: 10.1103/physrevb.33.7514
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Inelastic electron lifetime in niobium films

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Cited by 21 publications
(2 citation statements)
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“…a o / a s = m/n and n = m i l (8) where n and m are integers, then the interface can be divided into units of length ma, (or na,,). In some of the units overgrowth atoms strain to lie at atomic sites in the substrate and in the other units interfacial dislocations with Burgers vector of kao/m (or f a,/n) are generated.…”
Section: Epitaxialgrowthmentioning
confidence: 99%
“…a o / a s = m/n and n = m i l (8) where n and m are integers, then the interface can be divided into units of length ma, (or na,,). In some of the units overgrowth atoms strain to lie at atomic sites in the substrate and in the other units interfacial dislocations with Burgers vector of kao/m (or f a,/n) are generated.…”
Section: Epitaxialgrowthmentioning
confidence: 99%
“…Here, we use scaling analysis to study the B-induced SMT in the thin niobium (Nb) films. This issue has not been investigated before, despite many studies devoted in the past to properties of Nb films [26][27][28][29][30][31][32][33][34][35][36][37] . The films studied here, with thickness d between 1.2 nm and 20 nm, are sandwiched between two Si barrier layers of 10 nm to prevent oxidation, as described recently 38 .…”
Section: Introductionmentioning
confidence: 99%