Industry Examples at the State-of-the-Art

Knoll, D.

doi:10.1201/9781420026580.ch3.9

Cited by 2 publications

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“…Thin-film alloys from the SiGe system have been developed for high-frequency microelectronic devices that have found application in the area of wireless communication, telecommunications and other fields. Heterojunction bipolar transistors (HBTs) using epitaxial Si 1-x-y Ge x C y base layers with x and y around 20% and 0.5%, respectively, demonstrated high maximum oscillation frequencies that were increased from 60 GHz in 1998 to values in excess of 240 GHz in 2005 [4,5]. The process development of appropriate Si 1-x Ge x layers required accurate knowledge of the Ge concentration substitutionally incorporated into the Si lattice, which could be gained from HRXRD rocking curves [6][7][8][9][10].…”

Section: High-resolution Rocking Curvesmentioning

confidence: 99%

High‐Resolution X‐ray Diffraction

Birkholz¹,

Fewster²

2005

Thin Film Analysis by X‐Ray Scattering

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Epitaxial thin films are in the focus of this chapter after the various structural characteristics of polycrystalline thin films have been presented in previous ones. In epitaxial layers the crystal lattice of the underlying single-crystal substrate is intended to be continued into the thin film. These material systems thus exhibit a high degree of crystalline perfection. However, some deviations from the perfect crystal lattice do occur in epilayers and it is the measurement of these deviations with which this chapter is concerned. As before, the structural information is derived from the position, intensity and line shape of Bragg ref lections. However, in addition, the high degree of crystallinity necessitates refining the methodology with respect to both experimental equipment and theoretical understanding.Special experimental equipment has to be introduced in order to resolve the very closely spaced peaks that occur in the diffraction pattern of epilayer-substrate material systems. This is the reason for naming the field high-resolution x-ray diffraction (HRXRD). It often happens that observable peaks are as close as 0.001°a part and that the structural information to be derived deserves the precise measurement of this spacing. This cannot be obtained with the diffractometer settings presented so far for the investigation of polycrystalline material. The precision ∆d/d by which interplanar spacings may be determined is given bywhere ∆λ is the spectral width or bandwidth of the radiation used and δ is the beam divergence. In order to arrive at the low ∆d/d values mentioned above crystal monochromators and analyzers have to be introduced into the beam path; these select only those x-rays that are Bragg ref lected from a single crystal or a whole set of them. These systems are presented in Instrumental Box 8. An overview of ∆d/d ratios relevant to XRD and HRXRD is given in Fig. 7.1 that has been taken from the seminal paper of Bartels [1]. The diagram clearly shows the necessity of achieving an instrumental resolution in the region of seconds of arc in order to investigate thin-film devices produced in the electronic industry. Moreover, the theoretical basis has to be extended in order to interpret the Bragg peaks of epitaxial films. Use has so far been made of the kinematical theory of xray diffraction in this book, but a proper understanding of epitaxial film-substrateThin Film Analysis by X-Ray Scattering. M. Birkholz

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Section: High-resolution Rocking Curvesmentioning

confidence: 99%

High‐Resolution X‐ray Diffraction

Birkholz¹,

Fewster²

2005

Thin Film Analysis by X‐Ray Scattering

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“…While analog-SiGe technologies tend to have transistors with lower f T and higher breakdown voltage than best-of-breed SiGe HBT technologies (and are often placed on thick film SOI to improve isolation), given the size of the analog/mixed-signal market, where cost margins are typically much more favorably aligned than say for wireless handsets, the extra cost associated with adding a high-speed pnp transistor can be more easily justified. In fact, the core analog industry is moving rapidly in just this direction, with two recent demonstrations of complementary C-SiGe HBT platforms already in the early stages of manufacturing [6][7]. More will surely follow.…”

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Issues and Opportunities for Complementary SiGe HBT Technology

Cressler

2006

Meet. Abstr.

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Industry Examples at the State-of-the-Art

Cited by 2 publications

References 6 publications

High‐Resolution X‐ray Diffraction

High‐Resolution X‐ray Diffraction

Issues and Opportunities for Complementary SiGe HBT Technology

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