Abstract:The industrial level technologies including molecular beam epitaxy and submicron planar processing are developed to realize novel electron devices based on III-nitride multilayer heterostructures. Wide conditions range available on growth equipment used as well as flexible heterostructure designs allows controlling of device oriented material properties. For microwave applications, thick AlN "templates" grown at extremely high (up to 1100°C) substrate temperature in conjunction with multilayer transition regio… Show more
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