Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma

Min, Su Ryun; Cho, Han Na; Li, Yuelong; Chung, Chee Won

doi:10.1016/j.tsf.2007.08.023

Cited by 16 publications

(9 citation statements)

References 12 publications

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“…So the effects of the gas pressure on the etch rate and etch profile are uncertain. The etch rate may increase [26] , decrease [23,24,26] or remain unchanged [27] with the gas pressure increasing. The gas pressure is usually in the range of 5∼200 mTorr.…”

Section: Gas Pressurementioning

confidence: 99%

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Zheng¹,

Li²,

Wang³

et al. 2012

Plasma Sci. Technol.

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Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

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Section: Gas Pressurementioning

confidence: 99%

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Zheng¹,

Li²,

Wang³

et al. 2012

Plasma Sci. Technol.

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“…Dry etching of zinc oxide has been performed by using different gases as reactive species: chlorine-, bromine-, and flourine-based plasma chemical agents . However, combination of hydrogen and a hydrocarbon compound is most widely used in plasma-based reactive ion etching of zinc oxide.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ZnO Nanobrushes by H₂–C₂H₂ Plasma Etching for H₂ Sensing Applications

Kohlmann

Hansen

Lupan

et al. 2021

ACS Appl. Mater. Interfaces

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Zinc oxide has widespread use in diverse applications due to its distinct properties. Many of these applications benefit from controlling the morphology on the nanoscale, where for example gas sensing is strongly enhanced for high surface-to-volume ratios. In this work the formation of novel ZnO nanobrushes by plasma etching treatment as a new approach is presented. The morphology and structure of the ZnO nanobrushes are studied in detail by transmission and scanning electron microscopy. It is revealed that ZnO nanobrush structures are fabricated by self-patterned preferential etching of ZnO microtetrapods in a hydrogen–acetylene plasma. The etching process was found to be most effective at 1% C2H2 admixture. Nanowire arrays are formed enabled by sidewall passivation due to a-C:H deposition. The nanobrush structures are further stabilized by simultaneous deposition of a SiO x layer from the opposite direction. Highly sensitive (gas response S = 148), selective, and fast (response time 15 s, recovery time 6 s) hydrogen sensors are fabricated from single nanobrushes. Single nanobrush sensors show enhanced sensing performance in increased gas response S of at least 10 times and improved response as well as recovery times when compared to nonporous single ZnO nanorod sensors due to the small diameters (≈50 nm) of the formed nanowires as well as the strongly enhanced surface-to-volume ratio of the nanobrushes by a factor of more than 10.

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“…The SiNx and ZnO films were patterned by the dry etching. The dry etching gases of ZnO channel were HBr and Ar [13]. After definition of the active channel, a 150-nm-thick SiNx for the top gate insulator was deposited by PE-CVD at 150 • C. Contact holes for source and drain electrodes were opened by the dry etching.…”

Section: Introductionmentioning

confidence: 99%

Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer

Kim

Kang

Jeong

et al. 2011

IEICE Trans. Electron.

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We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiN x for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO 2 /Si substrates at 100 • C. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-µm and channel length of 5-µm. The fabricated coplanar dual-gate ZnO TFTs of 40-nm-thickness exhibits a field effect mobility of about 0.29 cm 2 /V s, a subthreshold swing 420 mV/decade, an on-off ratio 2.7 × 10 7 , and a threshold voltage 0.9 V, which are greatly improved characteristics, compared with conventional bottom-gate ZnO TFTs.

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Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma

Cited by 16 publications

References 12 publications

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Fabrication of ZnO Nanobrushes by H₂–C₂H₂ Plasma Etching for H₂ Sensing Applications

Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer

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Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma

Cited by 16 publications

References 12 publications

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

Fabrication of ZnO Nanobrushes by H2–C2H2 Plasma Etching for H2 Sensing Applications

Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer

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Fabrication of ZnO Nanobrushes by H₂–C₂H₂ Plasma Etching for H₂ Sensing Applications