Inductively coupled plasma reactive ion etching of Co2MnSi magnetic films for magnetic random access memory

Shin, Byul; Park, Ik Hyun; Chung, Chee Won

doi:10.1016/s0167-2991(06)81612-5

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…Magnetic random-access memories (MRAM) are one of the application products of spintronic technology. Shin et al (2006) investigated the effects of Cl2 and O2 gases with varying density on the Co2MnSi magnetic film, which was thought to be used for MRAM devices. They experimentally proved that the etch rate of the Co2MnSi magnetic film decreased with increasing Cl2 and O2 gas densities.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

Özdemir

2022

Gazi University Journal of Science Part A: Engineering and Innovation

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Half-metallic properties of NbAl2F4 spinel and semiconductor characteristics of TcAl2F4 spinel were investigated with the help of the WIEN2k program. NbAl2F4 spinel shows a metallic character in the up-electron states, while it has a semiconductor nature in the down-electron states. In NbAl2F4 spinel, the Eg bandgaps were calculated in GGA and GGA+mBJ 1.551 eV and 1.622 eV, respectively. The EHM half-metallic bandgaps were obtained 0.410 eV and 0.422 eV, respectively. In the up-spin states of TcAl2F4 spinel, Eg values were obtained 1.199 eV and 1.447 eV for the GGA and GGA+mBJ methods, respectively, while they were obtained 1.281 eV and 1.519 eV in the down-spin states, respectively. When GGA+mBJ is used, it is easily observed that the semiconductor characters increase. Total magnetic moments of NbAl2F4 and TcAl2F4 spinels were calculated 6.00 µB/cell and 10.0 µB/cell, respectively. When both electronic and magnetic moment values are carefully examined, NbAl2F4 and TcAl2F4 spinels can be used as alternative compounds in spintronic applications.

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Section: Introductionmentioning

confidence: 99%

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

Özdemir

2022

Gazi University Journal of Science Part A: Engineering and Innovation

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Dry etching of Co 2 MnSi magnetic thin films using a CH 3 OH/Ar based inductively coupled plasma

Garay

Hwang

Chung

2015

Vacuum

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Effect of O2 on etch characteristics of Co2MnSi thin films in CH4/O2/Ar gas mixture

Hwang

Garay

Chung

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Co2MnSi thin films masked with TiN films were etched in CH4/Ar and CH4/O2/Ar plasmas by inductively coupled plasma reactive ion etching. The etch rates decreased with increasing CH4 concentration in CH4/Ar gas, whereas the etch selectivity increased. The addition of O2 to CH4/Ar gas resulted in significant improvement in the etch profile but a decrease in the etch rates. Optical emission spectroscopy showed that a variety of COx, OH, and H2O species were formed in the CH4/O2/Ar plasma, acting a role as a passivation layer to protect the pattern sidewalls. X-ray photoelectron spectroscopy also confirmed the formation of metal oxides on the film surface, which could be sputtered off easily by Ar ion bombardment. A high degree of anisotropy of Co2MnSi films was obtained in the CH4/O2/Ar etch gas.

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Inductively coupled plasma reactive ion etching of Co2MnSi magnetic films for magnetic random access memory

Cited by 3 publications

References 7 publications

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

Dry etching of Co 2 MnSi magnetic thin films using a CH 3 OH/Ar based inductively coupled plasma

Effect of O2 on etch characteristics of Co2MnSi thin films in CH4/O2/Ar gas mixture

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