Inductively Coupled Plasma Reactive Ion Etching of GeSbTe Thin Films in a HBr/Ar Gas

Lee, Jang Woo; Cho, Han Na; Min, Su Ryun; Chung, Chee Won

doi:10.1080/10584580701249371

Cited by 10 publications

(7 citation statements)

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“…There have been a number of studies of plasma etching of phase change materials such as GST and its doped variants. A variety of gas chemistries have been reported in the literature, including Cl 2 /Ar [181][182][183][184][185][186], CHF 3 /Ar [181], CF 4 /Ar [186,187], HBr/Ar [188], CHF 3 /O 2 [189,190], and CHF 3 /Cl 2 /Ar [155]. Some of these studies have examined the effects of varying process parameters such as reactant gas concentration fraction, chamber pressure, coil power, and dc bias on the etch rate and anisotropy (i.e.…”

Section: Etchingmentioning

confidence: 99%

“…They suggested that TeCl 4 , not being as volatile as the Ge and Sb chlorides, accumulated on the surface and was removed by ion-stimulated desorption. In their etching studies of GST films using HBr/Ar in an ICP tool, Lee et al [188] pointed to the role of hydrogen in passivating the etched surface as well as the sidewalls, leading to more anisotropic etching and lower etch rates at higher HBr concentrations. Their XPS analysis showed that as the etch progressed, the surface became Te-deficient and Ge-and Sb-rich implying that Te reacted most readily with the bromine and was preferentially etched.…”

Section: Etchingmentioning

confidence: 99%

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Phase change memory technology

Burr,

Breitwisch,

Franceschini

et al. 2010

Preprint

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We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics.We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

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Section: Etchingmentioning

confidence: 99%

Section: Etchingmentioning

confidence: 99%

Phase change memory technology

Burr,

Breitwisch,

Franceschini

et al. 2010

Preprint

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show abstract

“…Recently, experiments have shown that emission current density of carbon nanotubes could be effectively enhanced by plasma treatments, which are capable of functionalizing and modifying the surface structure of carbon nanotubes [ 5 ]. In addition to carbon nanotubes, gas plasmas like H 2 [ 6 ], Ar [ 7 ], O 2 , and CF 4 [ 4 ] have also been adopted to modify other nanomaterials. The results demonstrate plasma treatment could be a simple and efficient method to improve the field-emission performance of nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Field Emission from Argon Plasma-Treated Ultra-sharp α-Fe2O3Nanoflakes

et al. 2009

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Hematite nanoflakes have been synthesized by a simple heat oxide method and further treated by Argon plasmas. The effects of Argon plasma on the morphology and crystal structures of nanoflakes were investigated. Significant enhancement of field-induced electron emission from the plasma-treated nanoflakes was observed. The transmission electron microscopy investigation shows that the plasma treatment effectively removes amorphous coating and creates plenty of sub-tips at the surface of the nanoflakes, which are believed to contribute the enhancement of emission. This work suggests that plasma treatment technique could be a direct means to improve field-emission properties of nanostructures.

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“…10 The etching characteristics of GST are widely investigated due to inclusive application of GST. The investigations of GST etching characteristics have been extensively carried out by various combinations of halogen-based chemistries such as, CF 4 , 11,12 CHF 3 , 13,14 Cl 2 , [15][16][17] HBr, 18 and their mixtures with Ar, or O 2 . However, scientific reports on chalcogenide TST etching characteristics are few.…”

mentioning

confidence: 99%

“…The HBr is selected as the main chemically active gas due to its application for high-anisotropic dry etching of GST. 18 Additionally, owing to the low reactivity of GST with Br, HBr shows the low volatility of the halogen etch products on GST, which indicates that HBr shows the lowest etch damage compared with CF 4 and Cl 2 . 19 The gas mixing ratio was selected as the only variable parameter due to two main reasons.…”

mentioning

confidence: 99%

Etch Characteristics and Mechanism of TiSbTe Thin Films in Inductively-Coupled HBr-He, Ar, N₂, O₂Plasma

Xia

Liu

et al. 2016

ECS J. Solid State Sci. Technol.

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Etch characteristics and mechanisms of TiSbTe thin films in inductively coupled HBr-He, HBr-Ar, HBr-N2, and HBr-O2 plasmas were studied in this paper. The etch rate of TiSbTe thin film was measured as functions of the additive gas fraction for He, Ar, N2 and O2 at a fixed gas pressure (5 mTorr, 1 mTorr = 0.133Pa), input power (700 W), bias power (300 W), and total gas flow rate (200 sccm). The etch rate and surface roughness of TiSbTe thin films showed non-monotonic behaviors as the increasing additive gas fraction in four plasma systems. Meanwhile, different kinds of additive gas resulted in different quantitative correlations between chemical and physical etching pathway, which eventually make difference on the etch rate and surface roughness of TiSbTe thin film. The surface chemical status of each component was also investigated in this study. The good performance of etch rate, surface roughness and low plasma damage suggested that HBr-Ar plasma is the best choice for TiSbTe etching compared with HBr-He, N2 and O2 plasma.

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Inductively Coupled Plasma Reactive Ion Etching of GeSbTe Thin Films in a HBr/Ar Gas

Cited by 10 publications

References 9 publications

Phase change memory technology

Phase change memory technology

Enhanced Field Emission from Argon Plasma-Treated Ultra-sharp α-Fe2O3Nanoflakes

Etch Characteristics and Mechanism of TiSbTe Thin Films in Inductively-Coupled HBr-He, Ar, N₂, O₂Plasma

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Inductively Coupled Plasma Reactive Ion Etching of GeSbTe Thin Films in a HBr/Ar Gas

Cited by 10 publications

References 9 publications

Phase change memory technology

Phase change memory technology

Enhanced Field Emission from Argon Plasma-Treated Ultra-sharp α-Fe2O3Nanoflakes

Etch Characteristics and Mechanism of TiSbTe Thin Films in Inductively-Coupled HBr-He, Ar, N2, O2Plasma

Contact Info

Product

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Etch Characteristics and Mechanism of TiSbTe Thin Films in Inductively-Coupled HBr-He, Ar, N₂, O₂Plasma