Inductively coupled plasma etching of bulk tungsten for MEMS applications

Xia, Yanming; Wang, Zetian; Song, Libin; Wang, Wei; Chen, Jing; Ma, Shenglin

doi:10.1016/j.sna.2022.113825

Cited by 12 publications

(8 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although SiN layers have a better capability to resist the diffusion of Ti atoms, it has an extremely high etch rate compared to that of SiO 2 which causes a small etch selectivity with W layers. [25][26][27] The thickness of the protective layer should be controlled appropriately, which needs to consider both the blocking effect and leaving enough space for the successful etching of the interconnect lines. The different thicknesses of protective SiO 2 layers were carefully determined using the TEM method.…”

Section: Resultsmentioning

confidence: 99%

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Tian,

Sun,

Ping

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

With the continuous evolution of Dynamic Random-Access Memory (DRAM) devices, there is a growing demand for increased storage density per unit area. In this work, we aim to create a high-density array of vertical channel transistors using advanced DRAM process technology. A thickness of SiO2 (X+3 nm) was determined for the protective layer, which shows best protecting effect. We employed chemical vapor deposition (CVD) to grow thin Ti films on the array's bottom. To reduce the resistance of buried bit line (BBL), we formed an high-quality metal silicide using a thermal annealing process combined with self-align technology. Nanoprobe measurements results show an average resistance of approximately 60 Ω of the bit line of each cell transistor, where the low series resistance can improve device performance. Our work involved optimizing the protective layers and achieving high-performance buried bit lines, paving the way for the development of high-density DRAMs.

show abstract

Section: Resultsmentioning

confidence: 99%

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Tian,

Sun,

Ping

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Commercially available powders of niobium and tungsten (supplied by VILS, Moscow, Russia) were used as the base material for fabricating the matrix of composite materials. Niobium powder contained 3%wt of niobium hydride, which was formed as a result Refractory metals are of much interest for use in the engineering of many spheres [13][14][15]. Carbides of niobium [16][17][18][19][20][21][22] and tungsten [23][24][25][26][27][28] are also of interest to the industry.…”

Section: Materials Equipment and Research Methodsmentioning

confidence: 99%

“…This article is focused on studying the opportunity to decrease the starting temperature of the reaction for fabricating carbides of refractory metals when using carbon nanoparticles as precursors. Refractory metals are of much interest for use in the engineering of many spheres [13][14][15]. Carbides of niobium [16][17][18][19][20][21][22] and tungsten [23][24][25][26][27][28] are also of interest to the industry.…”

Section: Introductionmentioning

confidence: 99%

Decrease in the Starting Temperature of the Reaction for Fabricating Carbides of Refractory Metals When Using Carbon Nanoparticles as Precursors

et al. 2022

View full text Add to dashboard Cite

Metal matrix composites with a matrix of refractory metals (niobium, tungsten) and reinforcing nanodiamond particles were prepared for studying the possibility of decreasing the starting temperature of carbide synthesis. The size of primary nanodiamond particles was 4–6 nm, but they were combined in large-sized agglomerates. Mechanical alloying was used for producing the composites by crushing agglomerates and distributing nanodiamonds evenly in the metal matrix. The initial and fabricated materials were investigated by X-ray diffraction, differential scanning calorimetry, and transmission and scanning electron microscopy. Thermal processing leads to the reaction for carbide synthesis. Studies have found that the usage of carbon nanoparticles (nanodiamonds) as precursors for fabricating carbides of refractory metals leads to a dramatic decrease in the synthesis temperature in comparison with macro-precursors: lower than 200 °C for tungsten and lower than 350 °C for niobium.

show abstract

“…Currently, diverse microstructures can be created by practical techniques, including optical lithography, electron beam lithography, selective electrodeposition, chemical deposition, plasma etching, nanoimprinting, and more [11][12][13][14][15][16][17]. Nevertheless, metal structure production via the mentioned techniques commonly involves the assistance of patterning masks and complex alignment processes.…”

Section: Introductionmentioning

confidence: 99%

Site-controlled preparation of metallic microstructures via mechanical scratch-induced selective electrodeposition

Zhu,

Gan,

Cui

et al. 2024

Surf. Topogr.: Metrol. Prop.

View full text Add to dashboard Cite

Controlled preparation of metallic microstructures attracts wide interest in sensor and electronic fields. However, limited by fabrication technology, it faces challenges in achieving template-free and orientational formation of metallic microstructures. Herein, a site-controlled strategy via scratch-induced selective electrodeposition was proposed to prepare high-quality metallic structures on silicon (Si) surface with the assistance of scanning probe lithography (SPL). The effects of scratching and depositing conditions were systematically investigated for optimizing the preparation process. Selective electrodeposition mechanisms were addressed through topographic and conductive detections. It was found that single-cycle scratch created under higher loads was beneficial for preparing compact and continuous Cu structures. Further analysis indicated that higher normal loads in scratching can facilitate obtaining more conductive sites, promoting orientated migration of metal ions during the reaction, while the increase of reciprocating cycles can cause more amorphous layers and hinder electron transport. Moreover, post-annealing treatment can lead to the growth of Cu grain sizes, which contributes to the crystallinity. Notably, the proposed method is demonstrated with the preparation of Cu coils, which is sensitive to alternating magnetic field. These findings shed new light on the site-controlled preparation of high-quality metallic microstructures and the applications.

show abstract

Inductively coupled plasma etching of bulk tungsten for MEMS applications

Cited by 12 publications

References 41 publications

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Decrease in the Starting Temperature of the Reaction for Fabricating Carbides of Refractory Metals When Using Carbon Nanoparticles as Precursors

Site-controlled preparation of metallic microstructures via mechanical scratch-induced selective electrodeposition

Contact Info

Product

Resources

About