1997
DOI: 10.1016/s0022-3093(96)00606-0
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Induced optical absorption in gamma, neutron and ultraviolet irradiated fused quartz and silica

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Cited by 157 publications
(91 citation statements)
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“…In general, these absorption bands are associated with either oxygen deficiency or oxygen excess in the glass network [2,3]. The most fundamental radiation induced defects in glasses are the non-bridging oxygen hole center (NBOHC: Si-O*), the E' center ( Si*), the peroxy radical (POR: Si-O-O*), and the trapped electron (TE), where the notation " " represents three bonds with other oxygens in the glass network and "*" denotes an unpaired electron [2][3][4]. In the glass exposed to radiations, hole trapped color centers with characteristic absorption bands around 430 nm were formed upon irradiation, leading to the development of the brown color.…”
Section: 1coloration Of Glassmentioning
confidence: 99%
“…In general, these absorption bands are associated with either oxygen deficiency or oxygen excess in the glass network [2,3]. The most fundamental radiation induced defects in glasses are the non-bridging oxygen hole center (NBOHC: Si-O*), the E' center ( Si*), the peroxy radical (POR: Si-O-O*), and the trapped electron (TE), where the notation " " represents three bonds with other oxygens in the glass network and "*" denotes an unpaired electron [2][3][4]. In the glass exposed to radiations, hole trapped color centers with characteristic absorption bands around 430 nm were formed upon irradiation, leading to the development of the brown color.…”
Section: 1coloration Of Glassmentioning
confidence: 99%
“…At variance, most of the works dealing with the generation of E' centers by UV laser photons have focused mainly on the E' center stationary concentration measured after irradiation [5,[7][8][9]. To our knowledge, only a few works have investigated the transient E' centers by monitoring the transmittance at 5.8 eV during irradiation [12][13][14]. In this paper we report experimental results obtained by in situ absorption spectra performed during and after laser exposure.…”
Section: Introductionmentioning
confidence: 99%
“…44 A low pressure of 10 À3 Pa was maintained inside the irradiation chamber. To ensure uniform irradiation, Ar-ion beam was scanned and the current was maintained at approximately 2.0 lA cm As the radiation induced defects can be removed by annealing at temperatures higher than 623 K, 45 postirradiation thermal annealing is usually employed to anneal ion irradiated samples. Therefore, thermal annealing was conducted ex situ under high vacuum (4.25 Â 10 À5 Pa) at 773 K for 2 h. After that, optical absorption spectra were recorded over a wavelength range of 300-800 nm on a spectrophotometer (JASCO V-630) with a spectral bandwidth of 1 nm, and the SEM observations were used to examine the surface modification.…”
Section: Methodsmentioning
confidence: 99%