Induced magnetic anisotropy in lifted (Ga,Mn)As thin films

Greullet, F.; Ebel, L.; Münzhuber, Franz; Mark, S.; Astakhov, G. V.; Kießling, T.; Schumacher, C.; Gould, C.; Βrunner, Karl; Ossau, W.; Molenkamp, L. W.

doi:10.1063/1.3597301

Cited by 2 publications

(1 citation statement)

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“…However, the synthesis of (Ga,Mn)As done using low‐temperature molecular beam epitaxy (LT‐MBE), whereby (Ga,Mn)As is grown with atom layer precision on lattice‐matched substrate, restricting its integration with some main‐stream semiconductors, and flexible applications. By using an epitaxial lift‐off (ELO) technique proposed by Yablonovitch et al, a 70 nm thick (Ga,Mn)As film has been lifted‐off from the epitaxial substrate . However, peeling off nanometer‐thick (Ga,Mn)As layer and making its vdWs heterostructure device with other layered materials remain elusive.…”

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confidence: 99%

Peeling off Nanometer‐Thick Ferromagnetic Layers and Their van der Waals Heterostructures

Yuan

Yao

Wang

et al. 2019

Adv Elect Materials

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Since the discovery of graphene in 2004, [1] the family of van der Waals (vdWs) materials has been growing rapidly, presenting a wide range of novel physical properties, such as semiconductors with spin-valley coupling, [2] Ising superconductors, [3] topological semimetals with edge transport [4] and Mott insulators with tunable charge-density waves, [5] etc. The recent addition of magnetic crystals in the twodimensional (2D) material family, such as CrI 3 , Cr 2 Ge 2 Te 6 , and Fe 3 GeTe 2 , provides an ideal platform for fundamental understanding of 2D magnetism, as well as the applications of low-power spintronic devices. [6][7][8] The electrical control of 2D magnetic properties recently becomes possible, for example, conversion of bilayer CrI 3 from interlayer antiferromagnetism to ferromagnetism by electrostatic doping, [9,10] and electrical modulation of few-layer Cr 2 Ge 2 Te 6 coercivity and saturation field. [11] The advances of vdWs heterostructures can couple the quasiparticle interaction between the 2D magnetic material and others with engineered strain, chemistry, optical and electrical properties, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as unprecedented control of the spin andThe recent discovery of 2D van der Waals (vdWs) magnetic crystals provides an ideal platform for fundamental understanding of 2D magnetism, as well as the applications of low-power spintronic devices. One can integrate 2D magnetic materials into vdWs heterostructures with engineered properties, and also manipulate the magnetism via electrostatic gating. However, due to their instability, the handing of 2D magnetic materials can only be carried out under the help of encapsulation with other 2D materials (such as hexagonal boron nitride (hBN)) in a glove box, which is the biggest barrier toward its practical applications. Here, an approach about peeling-off and transfer of 2D ferromagnetic (Ga,Mn)As layers with thickness of ≈10-20 nm grown by the molecular beam epitaxy under ambient conditions is introduced. Transmission electron microscopy characterizations confirm the singlecrystalline nature of the lifted-off (Ga,Mn)As. Superconducting quantum interference device measurements demonstrate that the lifted-off (Ga,Mn) As maintains its ferromagnetism. Using vdWs heterostructure assembly, technique hBN/(Ga,Mn)As top-gate Hall device and p-(Ga,Mn)As/n-MoS 2 heterojunction diode are fabricated. The electrical transport measurements demonstrate the ferromagnetic nature and gate tunable magnetoresistance of the lifted-off (Ga,Mn)As layer. This approach makes it possible to significantly expand the range of 2D ferromagnetic materials and their vdWs heterostructures.

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confidence: 99%