2001
DOI: 10.1016/s0921-4526(01)00937-1
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Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation

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Cited by 7 publications
(2 citation statements)
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“…24,25 ) About a 10% loss in optical power was observed for modern InGaAsP laser diodes emitting at 1.3 μm after a room-temperature gamma dose of 10 3 rad. 26 Doses up to about 10 7 -10 8 rad of γ-radiation do not cause catastrophic failure of laser diodes, 17 and laser diodes which are designed for high power and high speed (for use in data transmission lines) show only small reductions of light output power up to 60 Co gamma doses of 10 8 rad.…”
Section: Effects Of Gamma Irradiation On Laser Diodesmentioning
confidence: 99%
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“…24,25 ) About a 10% loss in optical power was observed for modern InGaAsP laser diodes emitting at 1.3 μm after a room-temperature gamma dose of 10 3 rad. 26 Doses up to about 10 7 -10 8 rad of γ-radiation do not cause catastrophic failure of laser diodes, 17 and laser diodes which are designed for high power and high speed (for use in data transmission lines) show only small reductions of light output power up to 60 Co gamma doses of 10 8 rad.…”
Section: Effects Of Gamma Irradiation On Laser Diodesmentioning
confidence: 99%
“…For example, in the InGaAsP laser diodes mentioned above, there was no degradation in optical power when irradiation occurred at 200°C. 26 Semiconductors undergo transient photocurrents from intense gamma-ray pulses from nuclear weapons (typically 10 6 to 10 12 rad(Si)·s -1 for a duration of less than 1 ms). 28 The electron-hole pair concentrations generated by a pulse with a dose rate of 10 9 rad(Si)·s -1 are as high as 10 18 cm -3 , well above most semiconductor doping levels.…”
mentioning
confidence: 99%