Induced junction (inversion layer) photodiode self-calibration

Booker, Robert L.; Geist, Jon

doi:10.1364/ao.23.001940

Cited by 25 publications

(8 citation statements)

References 12 publications

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“…Predicting the value of δ(λ) using fundamental principles together with the knowledge of some physical parameters enables to use the silicon photodiode as an absolute radiometric standard. This concept was first proposed in the late 1970s [22] and studied during the following decade [23][24][25][26][27][28]. However, it was not until quite recently that uncertainties close to those of cryogenic ESRs were proposed [29] and achieved [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Predictable quantum efficient detector based onn-type silicon photodiodes

et al. 2017

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Ikonen, E. (2017). Predictable quantum efficient detector based on n-type silicon photodiodes. Metrologia, 54(6) AbstractThe predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO 2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al 2 O 3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatiallyOriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

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Section: Introductionmentioning

confidence: 99%

Predictable quantum efficient detector based onn-type silicon photodiodes

et al. 2017

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“…2 The test QED 100 photodiode has an estimated precision of ±0.063 percent for a reverse bias of 9 V and ± 0.056 percent for a reverse bias of 18 V. 3 When the test QED 100 is compared to calorimeter C4-2, Figs. 3 and 4 show results within the instrument uncertainties.…”

Section: Resultsmentioning

confidence: 99%

“…1 illustrates this. An immediate application of such a device would be the establishment of a highly accurate detector-based scale of radiant power [3].…”

Section: Introductionmentioning

confidence: 99%

Laser power measurement standards: A comparison of two scales

Faaland

Naiman

1987

IEEE Trans. Instrum. Meas.

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A scale intercomparison between a C-series calorimeter and a commercially available, virtually 100-percent quantum-efficient photodiode device has been undertaken." The intercomparison has been performed at the helium-neon laser wavelength (632.8 nm) with power levels incident on the photodiode device ranging from 4 JlW to 1.4 mW. Results obtained when the photodiode device was reverse biased with 9 and 18 V indicate that the scales of the photodiode device and the Cseries calorimeter are linearly related with an average correction factor of 1.0047 and 1.0037, respectively. 2 6 5 4 3 7

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“…The ratios of the external quantum efficiencies of the two photodiodes are in direct proportion to the measured voltage responses when subjected to the same amount of radiation. Solving equation (4) below and substituting into (3) above yields equation (5). The value obtained from self-calibration on the UV-444B is 0.4606 A/W.…”

Section: Intercomparison Of a Qed-100 Withmentioning

confidence: 99%

“…The external quantum efficiency of the UV-444B is determined using equation (4) and the above data. The absolute spectral response is calculated using equation (5).…”

Section: Intercqmparisqn Of a Uv-loo With A Self-calibrated Uv-444bmentioning

confidence: 99%

Radiometric calibration procedures using the NBS MARBLE electronics package

Mickelson¹

1985

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Induced junction (inversion layer) photodiode self-calibration

Cited by 25 publications

References 12 publications

Predictable quantum efficient detector based onn-type silicon photodiodes

Predictable quantum efficient detector based onn-type silicon photodiodes

Laser power measurement standards: A comparison of two scales

Radiometric calibration procedures using the NBS MARBLE electronics package

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