For the crystalline temperature of BaSnO3 (BTO) was above 650 ℃, the transparent conductive BTO based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process. In the article, the microstructure, optical and electrical of BTO and In2O3 mixed transparent conductive BaInSnOx (BITO) film deposited by filtered cathodic vacuum arc technique (FCVA) on glass substrate at room temperature were firstly reported. The BITO film with thickness of 300 nm had mainly In2O3 polycrystalline phase, and minor polycrystalline BTO phase with (001), (011), (111), (002), (222) crystal faces which were first deposited at room temperature on amorphous glass. The transmittance was 70-80 % in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550 nm wavelength. The basic optical properties included the real and imaginary parts and high frequency dielectric constants, the absorption coefficient, and the Urbach energy and the indirect and direct band gaps, and the oscillator and dispersion energies, and the static refractive index and dielectric constant, and the average oscillator wavelength and oscillator length strength, and the linear and third-order nonlinear optical susceptibilities and the nonlinear refractive index were all calculated. The film was n type conductor with sheet resistance of 704.7 Ω/□, resistivity of 0.02 Ω ·cm and mobility of 18.9 cm2/V·s and carrier electron concentration of 1.6×1019 cm-3 at room temperature. The results suggested that BITO film deposited by FCVA had potential application in transparent conductive films based low temperature device process.