Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study

Abstract

The electronic behaviour of high-dose phosphorus implanted in 4H-SiC is mainly desirable to obtained lower sheet resistance of 4H-SiC. Al doping on the other hand acts as an acceptor, improves the dielectric properties of 4H-SiC and has very low diffusivity in SiC. Using a hybrid density functional theory, we investigated the properties of Al and P defect-complexes in 4H-SiC