Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

Feix, Felix; Flissikowski, Timur; Chèze, Caroline; Calarco, Raffaella; Grahn, H. T.; Brandt, O.

doi:10.1063/1.4960006

Cited by 6 publications

(9 citation statements)

References 30 publications

(32 reference statements)

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“…11,15 Most important, this energy is about 90 meV lower than the one measured for a SPSL also containing 1 ML In 0.29 Ga 0.71 N QSs, but 50 ML GaN QBs. 20 This redshift reflects the electronic coupling between the individual QSs, which becomes noticeable for barriers thinner than about 7 MLs. 11,15 Very similar transition energies have been observed for structures reportedly consisting of 1 ML InN and 7 MLs GaN, 21 for which much lower values would be expected theoretically.…”

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confidence: 99%

“…On the contrary, the (In,Ga)N QSs were found to induce a spatially separate localization of electrons and holes analogous to conventional (In,Ga)N QWs. 20 However, in a two-dimensional system as realized by the (In,Ga)N QSs, any deviation from a perfectly ordered state will induce carrier localization. 23 Detailed microscopic investigations are necessary to elucidate the degree of lateral ordering in the embedded (In,Ga)N QSs, and to devise growth strategies aimed to preserve the initial ordering of the ( √ 3 × √ 3)R30 • -In structure.…”

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confidence: 99%

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In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Chèze

Feix

Anikeeva

et al. 2017

Applied Physics Letters

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We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasmaassisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a ( √ 3 × √ 3)R30 • surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In 0.33 Ga 0.67 N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures.arXiv:1701.04680v1 [cond-mat.mtrl-sci]

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confidence: 99%

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confidence: 99%

In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Chèze

Feix

Anikeeva

et al. 2017

Applied Physics Letters

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“…the thinnest barrier sample showed a very low luminescence efficiency. The much lower luminescence yield of the 6 MLs barrier sample was additionally confirmed by means of quasi-resonant PL measurements, using an excitation wavelength below the bandgap of GaN 28 . Moreover, this effect does not depend on the thickness of a GaN cap layer as confirmed by PL measurements of an additional sample with 6 MLs GaN barrier capped with 40 nm of GaN (not shown here).…”

Section: Resultsmentioning

confidence: 76%

“…A similar model has been discussed in the work of Feix et al . 28 observing a power law decay for a similar set of samples measured on a long range time scale (up to 30 ns). However, strong in-plane localization of electrons within the In 0.25 Ga 0.75 N QW is unlikely for our system since the InGaN composition variations are barely above the measuring precision of ±3% of In, suggesting a random alloy.…”

Section: Discussionmentioning

confidence: 74%

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Role of hole confinement in the recombination properties of InGaN quantum structures

Anikeeva

Albrecht

Mahler

et al. 2019

Sci Rep

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We study the isolated contribution of hole localization for well-known charge carrier recombination properties observed in conventional, polar InGaN quantum wells (QWs). This involves the interplay of charge carrier localization and non-radiative transitions, a non-exponential decay of the emission and a specific temperature dependence of the emission, denoted as “s-shape”. We investigate two dimensional In 0.25 Ga 0.75 N QWs of single monolayer (ML) thickness, stacked in a superlattice with GaN barriers of 6, 12, 25 and 50 MLs. Our results are based on scanning and high-resolution transmission electron microscopy (STEM and HR-TEM), continuous-wave (CW) and time-resolved photoluminescence (TRPL) measurements as well as density functional theory (DFT) calculations. We show that the recombination processes in our structures are not affected by polarization fields and electron localization. Nevertheless, we observe all the aforementioned recombination properties typically found in standard polar InGaN quantum wells. Via decreasing the GaN barrier width to 6 MLs and below, the localization of holes in our QWs is strongly reduced. This enhances the influence of non-radiative recombination, resulting in a decreased lifetime of the emission, a weaker spectral dependence of the decay time and a reduced s- shape of the emission peak. These findings suggest that single exponential decay observed in non-polar QWs might be related to an increasing influence of non-radiative transitions.

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Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

Tomm

Bercha

Muzioł

et al. 2023

Physica Rapid Research Ltrs

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The analysis of the photoluminescence of polar light emitting diode (LED) structures with a 25 nm In0.17Ga0.83N quantum well is reported. The observed emission most likely originates from a set of energetically close excited states (ES), while the ground state decays only extremely slowly on a μs‐to‐ms timescale, that is, long‐living charge accumulates there. However, this population can also be quantified spectroscopically by applying short reverse voltage pulses. The emission from ES is effective and nearly exponential with decay time constants of 1.5 and 8 ns at 6 and 300 K, respectively, and is likely dominated by radiative processes. These findings point to a possible route to improved polar device architectures.

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Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

Cited by 6 publications

References 30 publications

In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

In/GaN(0001)-(3×3)R30° adsorbate structure as a template for embedded (In, Ga)N/GaN monolayers and short-period superlattices

Role of hole confinement in the recombination properties of InGaN quantum structures

Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells

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