Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

Álvarez-Fraga, Leo; Jiménez-Villacorta, Félix; Sánchez-Marcos, J.; Prieto, C.

doi:10.1016/j.apsusc.2015.03.096

Cited by 30 publications

(6 citation statements)

References 26 publications

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“…They also noticed a decrease in conductivity at same doping level. In our case, it should also be noted that the achieved conductivity value for the ZIO thin film composition with 5.0 mol% In 2 O 3 corresponds to one of the best among values declared for transparent electrodes formed on unheated substrates [36][37][38][39].…”

Section: Resultssupporting

confidence: 58%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

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Section: Resultssupporting

confidence: 58%

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Akhmedov

Abduev²,

Murliev

et al. 2021

Materials

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“…Performance of the transparent conductive materials is typically characterized by means of figure of merit that considers the electrical and optical properties of the thin films [16] defined by: ,…”

Section: Figure Of Meritmentioning

confidence: 99%

“…Fig. 8b shows the XPS spectra of Sn 3d, the peaks located at 486.9 and 495.3 eV were assigned to Sn 3d5/2 and Sn 3d3/2, respectively, this binding corresponds to the Sn +4 bonding state in the ITO [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. As seen from Fig.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 99%

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Boussoum¹,

Belkaid²,

Renard³

et al. 2019

J. Nano- Electron. Phys.

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In the paper we propose to investigate the effect of the annealing gas and RF power sputtering on the electrical, structural and optical properties of indium tin oxide thin films for solar cells applications. These thin films were prepared on lightly doped silicon wafer by RF sputtering in Ar environment at room temperature and with a pressure of 8•10-3 mbar. Process parameters such as RF power and post deposition annealing were varied in order to determine their dependence on electrical, structural and optical properties of ITO thin films. Layer morphology and thickness measurements (with cross section) were investigated by scanning electron microscopy, and atomic force microscopy was performed to determine the surface roughness. The dependence of the resistivity, mobility and carrier concentration of these films by varying RF power and thermal annealing were studied by Hall Effect measurement. Spectroscopic ellipsometry was also used to determine the refractive index, thickness, roughness, porosity and optical bandgap of the films. Thus, the optical transmittance in the visible region was found to be above 85 %, the low resistivity and high mobility were found 2.09 10-4 Ω•сm and 35.81 cm 2 /(V•s), respectively, for 200 nm thickness for the sample elaborated with a RF power of 150 W and an annealing at 400 °C for 10 min with rapid thermal annealing under N2. The X-ray diffraction patterns of the thin films indicated a preferred orientation along the (222) plane, which provides a high degree of crystallinity for all N2 annealed samples. The XPS was used to determine oxidation states and identify the elemental content in the films. Obtained results for the surface morphology, electrical and optical properties of the ITO thin film details will be presented.

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“…The lower transmittance of the sample on the PET substrate than that of the sample on the K9 glass substrate may be due to the rough surface of the PET substrate, which needs to be modified. The deposition parameters of the TCs should also be optimized [45][46][47]. To verify the flexibility, the samples, on polymetric PET substrate, were subjected to a bending test using a homemade one-dimensional motorized translation stage.…”

Section: Resultsmentioning

confidence: 99%

Design and Fabrication of an Ag Ultrathin Layer-Based Transparent Band Tunable Conductor and Its Thermal Stability

Zhao

Wang

et al. 2023

Nanomaterials

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Transparent conductors (TC) have been widely applied in a wide range of optoelectronic devices. Nevertheless, different transparent spectral bands are always needed for particular applications. In this work, indium tin oxide (ITO)-free TCs with tunable transparent bands based on the film structure of TiO2/Ag/AZO (Al-doped ZnO) were designed by the transfer matrix method and deposited by magnetron sputtering. The transparent spectra and figure-of-merit (FOM) were effectively adjusted by precisely controlling the Ag layer’s thickness. The fabricated as-deposited samples exhibited an average optical transmittance larger than 88.3% (400–700 nm), a sheet resistance lower than 7.7 Ω.sq−1, a low surface roughness of about 1.4 nm, and mechanical stability upon 1000 bending cycles. Moreover, the samples were able to hold optical and electrical properties after annealing at 300 °C for 60 min, but failed at 400 °C even for 30 min.

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Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

Cited by 30 publications

References 26 publications

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Design and Fabrication of an Ag Ultrathin Layer-Based Transparent Band Tunable Conductor and Its Thermal Stability

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