Indium Tin Oxide Thin Films Deposited at Low Temperature Using Dual Ion Beam Sputtering

Abstract

ITO samples were sputtered at room temperature by ion assisted dual ion beam sputtering using atomic or molecular oxygen. The electrical properties appear to depend on the oxygen flow rate during deposition and the resistivity decreases for samples sputtered at a higher oxygen flow rate (1-5 sccm). The resistivity is lowest at an oxygen flow rate of 4 sccm. The average absorption in the visible part of the spectrum also decreases as a function of the oxygen flow rate and is lower for samples sputtered with atomic oxygen. The figure of merit, i.e. the ratio of the conductivity versus the average absorption in the visible range, increases for higher oxygen flow rates and is typically 20-60% higher for samples sputtered using an atomic oxygen assist beam.

Development of a Heater Structure Based on ITO Films Deposited by RF Magnetron Sputtering for Chip-scale Atomic Clock

“…In this paper, ITO films deposited by an RF magnetron sputtering method are used to form the heater structure for the heating performance and transparent property. Although there are different methods for ITO deposition including reactive thermal evaporation [4], chemical vapor deposition(CVD) [5], ion beam sputtering [6], and so on, the RF magnetron sputtering method is selected for a high depositing rate, a large depositing area, less damaged areas, better uniformity and better adhesion to the glass substrate comparing with other depositing methods [7,8]. The influence of the factors, including the RF power and the depositing pressure, on the characteristics of the ITO film is investigated first.…”