Indium sulfide thin films deposited by the spray ion layer gas reaction technique

Allsop, N.; Schönmann, Antje; Belaidi, Abdelhak; Muffler, H.-J.; Mertesacker, B.; Bohne, W.; Strub, Erik; Röhrich, J.; Lux‐Steiner, Martha Ch.; Fischer, Ch.‐H.

doi:10.1016/j.tsf.2006.01.019

Cited by 58 publications

(56 citation statements)

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“…This might be due to an incomplete conversion of the precursor to the sulfide, which has been previously studied. 14 The detail spectra in Fig. 2͑a͒ reveal that the intensity of the CIGSSe related Na 1 s, Cu 2p…”

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confidence: 96%

“…The CIGSSe is formed by rapid thermal annealing of stacked elemental layers on Mo-coated soda-lime glass in a sulfur containing atmosphere. 13 For the preparation of the nominal In 2 S 3 layers, we used the Spray-ILGAR technique, 6,14 where a precursor solution is sprayed onto the heated absorber substrates followed by conversion of the solid film to a chalcogenide by a reactive gas. In the present study, the spray solution used is InCl 3 dissolved in ethanol and the reactive gas is H 2 S. A more detailed description can be found elsewhere.…”

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confidence: 99%

“…In the present study, the spray solution used is InCl 3 dissolved in ethanol and the reactive gas is H 2 S. A more detailed description can be found elsewhere. 6,7,14 Because of the cyclical nature of the Spray-ILGAR process, the thickness of the buffer layer can simply be adjusted by varying the number of spray cycles. A set of samples where this number has been varied between 0 ͑bare, uncovered CIGSSe absorber͒, 1, 2, 3, 4, and 6 was investigated.…”

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confidence: 99%

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Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

Bär

Allsop

Lauermann

et al. 2007

Applied Physics Letters

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Recently, Cd-free Cu͑In, Ga͒͑S,Se͒ 2 -based "CIGSSe" thin film solar cells with a nominal In 2 S 3 buffer layer deposited by the spray ion layer gas reaction technique resulted in photovoltaic performances comparable to that of CdS buffered references. In the past it was argued that diffusion processes across the In 2 S 3 / CIGSSe interface play a significant role for the device quality. Investigating the interface formation by using x-ray photoelectron spectroscopy, the authors were able to confirm a strong interfacial diffusion involving Cu and Na from the CIGSSe.

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confidence: 99%

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confidence: 99%

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Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

Bär

Allsop

Lauermann

et al. 2007

Applied Physics Letters

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“…The presence of Cl in indium sul¯de thin¯lms was observed before applying the ILGAR technique. 29 Barreau pointed out that residual precursor elements are common when using chemical deposition techniques. 30 A signi¯cant factor observed from the EDS analyses, was the ratio In:S (Table S1).…”

Section: Resultsmentioning

confidence: 99%

Vertically Aligned ZnO/In_xS_y Core–Shell Nanorods for High Efficient Dye-Sensitized Solar Cells

González-Valls

Ballesteros

Lira‐Cantú

2015

NANO

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Innovative vertically aligned ZnO/In x S y nanorod (NR) electrodes were prepared by successive ion layer adsorption and reaction (SILAR) technique. The In x S y shell layer was deposited on top of ZnO NR electrodes of two di®erent lengths, $ 1:6 m and $ 3:2 m. Two sulfur contents on the In x S y shell layer with di®erent layer thicknesses were analyzed. These electrodes were fully characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray di®raction spectroscopy (XRD), Energy-dispersive x-ray spectroscopy (EDS), Infrared spectroscopy (FT-IR), x-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) and then applied in dye-sensitized solar cells (DSC). Power conversion efciency of 2.32% was observed when a low-sulfur content In x S y shell layer was applied in comparison to the stoichiometric In 2 S 3 shell layer (0.21%) or the bare ZnO NRs (0.87%). In the case of low sulfur content, a shell layer of In(OH) x S y or/and In(OH) 3 is formed as observed by the presence of -OH observed by FTIR analyses. The presence of higher amounts of hydroxide groups modi¯es the bandgap and work function of the In x S y shell and facilitates dye adsorption, increasing the¯nal solar cell performance.

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“…A radial ZnO / In 2 S 3 heterojunction was prepared by covering the nanorods with indium sulfide (In 2 S 3 ) using the Spray-ILGAR process described in (14). An ethanolic solution of 25 mmol/l indium chloride (Alfa Aesar, 99.99%) was sprayed for 30 sec.…”

Section: Methodsmentioning

confidence: 99%

Charge separation and recombination in radial ZnO/In2S3/CuSCN heterojunction structures

Tornow

Schwarzburg

Belaidi

et al. 2010

Journal of Applied Physics

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A ZnO-nanorod/In2S3/CuSCN radial hetero structure has recently shown promising photovoltaic conversion efficiencies. In this work, the charge separation and recombination in single ZnO/ In2S3 and In2S3/CuSCN interfaces as well as the complete ZnO/In2S3/CuSCN structure were studied by time resolved microwave photoconductivity. Photoconductivity transients were measured for different thicknesses of the In2S3 light absorbing layer, under variation of the exciting light flux and before and after annealing of the ZnO nanorods at 450°C. Upon excitation with 532nm light, a long lived (ms) charge separation at the In2S3/ZnO interface was found, whereas no charge separation was present at the In2S3/CuSCN interface. The presence of the CuSCN hole conductor increased the initial amplitude of the TRMC signal of the In2S3/ZnO interface by a factor of 8 for a 6nm thick In2S3 layer, but the enhancement in amplitude dropped strongly for thicker films. The measurements show that the primary charge separation is located at the In2S3/ZnO interface but the charge injection yield into ZnO depends critically on the presence of CuSCN.

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Indium sulfide thin films deposited by the spray ion layer gas reaction technique

Cited by 58 publications

References 14 publications

Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

Vertically Aligned ZnO/In_xS_y Core–Shell Nanorods for High Efficient Dye-Sensitized Solar Cells

Charge separation and recombination in radial ZnO/In2S3/CuSCN heterojunction structures

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Indium sulfide thin films deposited by the spray ion layer gas reaction technique

Cited by 58 publications

References 14 publications

Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion

Vertically Aligned ZnO/InxSy Core–Shell Nanorods for High Efficient Dye-Sensitized Solar Cells

Charge separation and recombination in radial ZnO/In2S3/CuSCN heterojunction structures

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Vertically Aligned ZnO/In_xS_y Core–Shell Nanorods for High Efficient Dye-Sensitized Solar Cells