Indium Silicon Oxide TFT Fully Photolithographically Processed for Circuit Integration

Yao, Guangyu; Ma, Hanbin; Sambandan, Sanjiv; Robertson, John; Nathan, Arokia

doi:10.1109/jeds.2020.3017392

Cited by 5 publications

(1 citation statement)

References 25 publications

(19 reference statements)

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“…As the representative semiconductor material of metal oxide, amorphous indium-gallium-zinc oxide (a-IGZO) is widely used in circuit driver of active-matrix display and peripheral logic units due to their high mobility, excellent stability, mechanical flexibility and large area processability [5][6][7][8] . However, due to the inaccessible low valence band edge [4] , most metal oxide materials in nature show n-type semiconductor characteristic, which greatly limits their applications in logic circuits [9,10] . Contrary to metal oxide materials, most organic materials exhibit semiconductor characteristics of intrinsic p-type, and have the advantages of flexibility, ease of synthesis, low processing temperature and a wide range of varieties [11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

Complementary-Like Inverter Based on Organic-Inorganic Heterojunction Ambipolar Transistors on Flexible Substrate

Peng

Liu

Sun

et al. 2021

IEEE J. Electron Devices Soc.

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Flexible electronic devices featured with miniaturization, light weight and integration, can meet the needs of new generation mobile electronics, and thus have received extensive attention. Obtaining the stable logic devices on flexible substrates is a prerequisite for the application of flexible electronic devices. In this paper, we report the fabrication of organicinorganic heterojunction ambipolar transistors on flexible Polyimide (PI) substrate and the application of ambipolar transistors in logic circuits. The ambipolar transistors are fabricated by directly depositing p-type organic material dioctylbenzothieno[2,3-b]benzothiophene (C8-BTBT) on amorphous indium-gallium-zinc oxide (a-IGZO) TFT. The fabricated ambipolar transistors with vertically stacked structure show obviously V shape transfer characteristic curves. In addition, the complementary-like inverter is realized with two identical heterojunction ambipolar transistors, which can work in both first and third quadrants. This work provides a method of processing heterojunction ambipolar transistors on flexible substrate by almost fully photolithographic steps, which shows possible potential in the field of flexible electronics devices.

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