Indium selenide (In2Se3) thin film for phase-change memory

Lee, Heon; Kang, Dae Hwan; Tran, L.

doi:10.1016/j.mseb.2005.02.060

Cited by 83 publications

(82 citation statements)

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“…The ultrahigh-density phase-change memory can be formed by using the difference resistance between various phases of IS. 2,3 Recently, the In 2 Se 3 thin film has been used in Mo/ CIS/ In 2 Se 3 / ZnO solar cell fabrication as a buffer layer, and it plays an important role in improving efficiency. 4 There are some relatively well-known structures of In 2 Se 3 films, which include the layered structure ͑␣ phase͒, 5 rhombohedral structure ͑␤ phase͒, 6,7 defect wurtzite structure ͑␥ phase͒, and anisotropic structure ͑ phase͒.…”

mentioning

confidence: 99%

Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors

Chang¹,

Lahn²,

Chang³

2006

Applied Physics Letters

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Characterizations of InN films on Si (111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method J. Vac. Sci. Technol. A 25, 701 (2007); 10.1116/1.2740293Growth and characterization of single crystal ZnO thin films using inductively coupled plasma metal organic chemical vapor deposition Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor

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mentioning

confidence: 99%

Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors

Chang¹,

Lahn²,

Chang³

2006

Applied Physics Letters

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“…In 2 Se 3 is a III-VI semiconductor and phase change material that exists in multiple crystalline phases, including the layered ↵ and phases and the defect wurtzite phase [5][6][7][8][9]. In 2 Se 3 may o↵er advantages over Ge 2 Sb 2 Te 5 as a potential PRAM material because of its higher resistivity and the large di↵erence in resistivity between the crystalline and amorphous phases, up to a factor of 10 5 [3]. In addition, the multiple metastable crystalline phases of In 2 Se 3 at ambient conditions may allow for multilevel memory [2,10].…”

Section: Indium Selenidementioning

confidence: 99%

Pressure-induced phase transitions of indium selenide

Rasmussen¹

2016

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My advisor, Matthew McCluskey, for teaching me how to do physics, from performing experiments to interpreting the results, and for mentoring and encouraging me these last six years. My labmates for assisting in experiments, listening to practice talks, and for providing amusement during long work days. Elham Mafi and Yi Gu for providing the nanowire samples, performing Raman measurements, and contributing to manuscripts. The beamline 12.2.2 team at ALS/LBNL: Martin, Christine, Andrew, and Alistair, for hosting me last year as a doctoral fellow and for their assistance with the XRD experiments. Wenguang Zhu for performing first-principles calculations. Zhongwu Wang at CHESS for assisting with the XRD experiments. My classmates for all the late nights finishing homework, our prelim study sessions, and emotional support. Michele and Kasey, I wouldn't have made it to the end without the two iii of you. My family who have provided support, encouragement, and childcare: Candace (a.k.a. Aunt Candace), Mom (a.k.a. Grandma), Dad (a.k.a. Grandpa), Jill (a.k.a. Grammy), and Abby (a.k.a. ABBY!). My husband, Chris. I am who I am today because of you.

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“…Crystallisation kinetics studies give insight into transport mechanism, glass forming ability (GFA), thermal stability and range of temperature for transformation from amorphous to crystalline which is an important knowledge in technological applications based on glassy, crystalline states or reversible transformations. Little has been found in literature on the crystallisation kinetics in Se-In despite this material being a platform for a wide range of technological applications [13,14]. In this study, diverse quantitative methods have been applied to study glass transition/ crystallisation kinetics, glass forming ability as well as thermal stability of Se 100 − x In x (x = 5, 10,15,20) alloys under non-isothermal conditions.…”

Section: Introductionmentioning

confidence: 99%