Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy

Nogami, J.; Park, Sang-Il; Quate, C. F.

doi:10.1103/physrevb.36.6221

Cited by 173 publications

(64 citation statements)

References 13 publications

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“…The adsorption of the B [6], Al [7], Ga [8] and In [9] adatoms on the Si(111) surfaces is now well understood: the ( √ 3 × √ 3)R30 • adatom structures were all observed, and confirmed by parallel theoretical studies. The T4 structures are found to be more stable than the H3 ones, whereas the S5 structure is only observed with the B adatoms [6]; the latter preference is a consequence of the small atomic size and strong electronegativity of the B adatoms.…”

mentioning

confidence: 69%

Ga- and As-Adatom phases on the Ge(111) and Si(111) surfaces: analogies and differences

Cheng

Kunc

1997

Zeitschrift für Physik B Condensed Matter

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The (1×1) and ( √ 3 × √ 3)R30 • (T4) structures of Ga and As adatoms on the Ge(111) and Si(111) surfaces are studied using first-principles calculations. The surface energetics predicts, in some cases, a transformation of the T4 structure (surface covered with 1/3 monolayer (ML) of adatoms) into domains of the 1-ML covered (1×1) structure and areas of clean reconstructed suface. For As adatoms, such phase separation is favored on both substrates, while for Ga adatoms, it is only preferred on the Ge (111) surfaces. These results compare well with experimental observations. PACS: 68.35.Bs; 68.35.MdThe Ge(111) and Si(111) surfaces with the III-A and V-A adatoms form an interesting group of systems that demonstrates the subtlety of the mechanisms controlling the stabilization of an adatom structure. In this contribution we summarize an ab initio study of the energetics of the Ga and As adatom structures on the Ge(111) and Si(111) surfaces. We limit ourselves to thin overlayers, viz. those consisting of 1 monolayer (ML) or 1/3 ML of adatoms and compare how the Ga and As deposition differs on the Ge and Si surfaces. We will see that even within so limited a scope the experiments raise a number of puzzling questions, in particular, why completely different behavior is observed in systems as analogous as Si and Ge substrates.The smallest translational units compatible with the 1 ML and 1/3 ML coverages are the (1×1) and the ( √ 3 × √ 3)R30 • surface cells; the latter is shown in Fig. 1, and the present work is bounded by these two types of translational periodicity. The two cells are particularly interesting because, in both cases, adsorption of one adatom per unit cell leads to complete saturation of all the dangling bonds existing on the ideal Si(111) or Ge(111) surface. Also in both cases, the reconstruction of the original clean surface gets altered -we can figure that a "deconstruction" took place at some intermediate stage, restoring the ideal surface, before the adatom layer imposes its own reconstruction.Clearly, the notion of the ideal, unreconstructed surface is rather hypothetical; it nevertheless offers a convenient reference point for quantities such as surface energies, adsorption energies, etc. The ideal surface may also be a more Fig. 1. Top view of the T4 adatom structure. The area enclosed by the dashed lines corresponds to the surface unit cell of theIn the (1×1) structure, the adatoms replace all surface atoms (the first-layer atoms) of the ideal (111) surface convenient starting point for constructing structural models of surfaces with overlayers than the reconstructed surface on which the real adsorption process actually starts. We thus choose, as the reference configuration throughout this work, the "one-dangling-bond-terminated" ideal surface, in which every surface atom carries one non-saturated dangling bond. One can also figure a "three-dangling-bond-terminated" ideal surface, which would be obtained from the other type by removing one plane of atoms; this notion is even further from the real s...

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mentioning

confidence: 69%

Ga- and As-Adatom phases on the Ge(111) and Si(111) surfaces: analogies and differences

Cheng

Kunc

1997

Zeitschrift für Physik B Condensed Matter

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“…This is another example of a structure that had been extensively studied but not solved (Nogami et al, 1987;Stevens et al, 1993). In particular, AES and photoemission studies suggested that four indium atoms were present in the (4 ϫ 1) unit cell (Abukawa et al, 1995;Nakamura et al, 1991), while ion-scattering spectrometry appeared to suggest that only two indium ions were present (Cornelison et al, 1991).…”

Section: Si (111)-(4 ؋ 1)-inmentioning

confidence: 95%

Electron crystallography in surface structure analysis

Leslie

Landree

Collazo-Davila

et al. 1999

Microsc. Res. Tech.

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“…This system was characterized structurally [5][6][7][8][9] and electronically [10,11]. In these works it was found that the In atoms were organized into linear chains of atoms, and that the electronic properties appeared to be highly anisotropic, with metallic behavior indicated by band crossings of E F along the chains.…”

Section: X1 Reconstruction: 1deg [4]mentioning

confidence: 99%

In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

et al. 2000

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We present angle-resolved photoemission measurements for ultrathin In films on Si(111). Depending on the coverage, this system self-organizes into a metallic monolayer with either 4x1 or !7x!3 symmetry relative to the substrate. Electronically, they behave like ideal one-and twodimensional electron gases (1DEG and 2DEG), respectively. The 4x1 system has atomic chains of In whose energy bands disperse only parallel to the chains, while for the !7x!3 system, the dominant reciprocal space features (in both diffraction and bandstructure) resemble a pseudosquare lattice with only weaker secondary features relating to the !7x!3 periodicity. In both materials the electrons show coupling to the structure. The 1DEG couples strongly to phonons of momentum 2k F , leading to an 8x"2" Peierls-like insulating ground state. The 2DEG appears to be partially stabilized by electron gap formation at the !7x!3 zone boundary.

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Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy

Cited by 173 publications

References 13 publications

Ga- and As-Adatom phases on the Ge(111) and Si(111) surfaces: analogies and differences

Ga- and As-Adatom phases on the Ge(111) and Si(111) surfaces: analogies and differences

Electron crystallography in surface structure analysis

In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

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