Indium-doped ZnO thin films deposited by the sol–gel technique

Luna-Arredondo, E.J.; Maldonado, A.; Asomoza, R.; Acosta, Dwight; Meléndez‐Lira, M.; Olvera, M. de la L.

doi:10.1016/j.tsf.2005.04.043

Cited by 125 publications

(58 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It is well known that the physical characteristics of the ZnO thin films depend on the doping, and then a study of the doping effect on the physical characteristics is always interesting. However, there are a few reports on the In--doped ZnO thin films deposited by sol-gel method [11]. Therefore, in this paper, the effects of In content on structural and optical properties of In-doped ZnO thin films prepared by sol-gel method were studied.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

et al. 2012

View full text Add to dashboard Cite

Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (E U ) was changed inversely with optical band gap of the indium-doped ZnO thin films.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

et al. 2012

View full text Add to dashboard Cite

show abstract

“…The suitable manipulation of precursor solutions allows for the fabrication of advanced materials in a wide variety of forms including thin film coatings and very homogeneous powders. Despite all these advantages, very few reports [21] [22] are published on solgel processed IZO thin films. Therefore, it was the aim of the present work to identify some of the factors involved in the sol-gel processing of In-doped zinc oxide and to optimize processing parameters to attain reproducible high-quality thin layers and properties.…”

Section: Introductionmentioning

confidence: 99%

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Bel-Hadj-Tahar¹,

Mohamed²

2014

NJGC

View full text Add to dashboard Cite

Transparent conducting films of zinc oxide and indium-doped zinc oxide have been prepared by a simple and economical sol-gel technique. This process is feasible for the fabrication of high quality TCO thin films when the processing parameters are optimized. It was found that the out-diffusion of oxygen during the vacuum annealing step was a crucial factor to prepare thin layer with superior properties. Annealing lowers the resistivity down to 4.7 10 −3 Ω•cm for the 1 at.% doped films due to the liberation of high-valency In-dopants and the enhanced film density. At high indium concentrations, the free electron density stabilizes because an increasing number of dopant atoms form some kinds of neutral defects. The neutralized indium atoms do not contribute free electrons. The feasibility to deposit highly transparent ZnO thin films has been demonstrated.

show abstract

“…In most cases, the purpose of the doping is to modulate the optical and or electrical properties of ZnO thin films. Dopants such as Al, Ga, In, B, Ag, and Cl were all expected to enhance the native n type conductivity of ZnO [16][17][18][19][20][21][22] . Dopants like Cd, Mg have been shown to modify the optical properties of ZnO by changing its band gap [23] .…”

Section: Introductionmentioning

confidence: 99%

Effect of Mg Doping on Structural and Optical Properties of Al-Mg Co-doped ZnO Thin Films Deposited via Sol-gel Technique

A¹,

Chaik²,

Jannane³

et al. 2018

Res. Rev. J Mat. Sci

View full text Add to dashboard Cite

Indium-doped ZnO thin films deposited by the sol–gel technique

Cited by 125 publications

References 18 publications

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

Effect of Mg Doping on Structural and Optical Properties of Al-Mg Co-doped ZnO Thin Films Deposited via Sol-gel Technique

Contact Info

Product

Resources

About