Indium antimonide large-format detector arrays

Davis, Mike; Greiner, Mark E.

doi:10.1117/1.3590722

Cited by 15 publications

(3 citation statements)

References 7 publications

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“…a bandgap of 0.163 eV [5], electron mobility of 105 cm 2 V −1 s −1 [6], and thermal conductivity of 16.0 W m −1 K −1 [7]. InSb is very sensitive to light in the range of 1-5 μm, and thus becomes an excellent material for infrared photodetectors [8]. In recent years, based on wafer-scale single crystal materials, and industrial semiconductor technology, InSb has found various applications, e.g.…”

Section: Introductionmentioning

confidence: 99%

Flexible infrared photodetector based on indium antimonide nanowire arrays

Shafa

Chen

et al. 2021

Nanotechnology

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Narrow bandgap semiconductors like indium antimonide (InSb) are very suitable for high-performance room temperature infrared photodetectors, but the fragile nature of the wafer materials hinders their application as flexible/wearable devices. Here, we present a method to fabricate a photodetector device of assembled crystalline InSb nanowire (NW) arrays on a flexible substrate that balances high performance and flexibility, facilitating its application in wearable devices. The InSb NWs were synthesized by means of a vapor–liquid–solid technique, with gold nanoclusters as seeding particles. The morphological and crystal properties were investigated using scanning electron microscopy, x-ray diffraction and high-resolution transmission electron microscopy, which revealed the unique spike shape and high crystallinity with (111) and (220) planes of InSb NWs. The flexible infrared photodetector devices were fabricated by transferring the NWs onto transparent and stretchable polydimethylsiloxane substrate with pre-deposited gold electrodes. Current versus time measurement of the photodetector devices under light showed photoresponsivity and sensitivity to mid-infrared at bias as low as 0.1 V while attached to curved surfaces (suitable for skin implants). A high-performance NW device yielded efficient rise and decay times down to 1 s and short time lag for infrared detection. Based on dark current, calculated specific detectivity of the flexible photodetector was 1.4 × 1012 Jones. The performance and durability render such devices promising for use as wearable infrared photodetectors.

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Section: Introductionmentioning

confidence: 99%

Flexible infrared photodetector based on indium antimonide nanowire arrays

Shafa

Chen

et al. 2021

Nanotechnology

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“…In the other design of InSb IRFPAs, the InSb photosensitive pixels are distributed in a reticulated array, and the pixels are isolated from each other, just as schematically shown in Fig. (1) [7]. Around the indium bump array, the underfill is not filled.…”

Section: Introductionmentioning

confidence: 99%

“…Both the isolated InSb pixel array and the isolated indium bump array are placed between the silicon substrate and the silicon ROIC. This design was successfully applied in the mass production of large format InSb IRFPAs in L-3 Cincinnati Electronics [7].…”

Section: Introductionmentioning

confidence: 99%

Deformation Analysis of 128×128 Infrared Detector with Reticulated InSb Pixel Array

Liu¹,

Zhang²,

Meng³

2015

TOEEJ

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The reticulated InSb pixel array was successfully employed in the design of large format InSb infrared focal plane arrays (IRFPAs) detector, to remove the thermal strain accumulated in InSb IRFPAs with the thermal shock test. In order to explore the deformation rules in the InSb IRFPAs with reticulated InSb pixel array, in light of the proposed equivalent modeling, a three-dimensional modeling of InSb IRFPAs is created, and the Z-component of strain is selected to compare the displacements in the various layers of InSb IRFPAs. Analyzing results that show the top surface deformation of InSb IRFPAs originates from the thermal mismatch between the silicon readout integrated circuit (ROIC) and the indium bump array directly above. After passing through the intermediate layer and the silicon substrate, the deformation amplitude along Z-direction is reduced firstly from 0.113 μm to 0.0395 μm, finally to 0.0042 μm. Here the intermediate layer is made up of the indium bump array and the reticulated InSb pixel array. These deformation data suggest that the InSb IRFPAs with reticulated InSb pixel array is superior to that designed with the underfill filled structure in the fabricating large format InSb IRFPAs.

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Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination

Guo

Chen

et al. 2012

Opt Quant Electron

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Indium antimonide large-format detector arrays

Cited by 15 publications

References 7 publications

Flexible infrared photodetector based on indium antimonide nanowire arrays

Flexible infrared photodetector based on indium antimonide nanowire arrays

Deformation Analysis of 128×128 Infrared Detector with Reticulated InSb Pixel Array

Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination

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