Indium and aluminium-doped ZnO thin films deposited onto FTO substrates: nanostructure, optical, photoluminescence and electrical properties

Benhaliliba, M.; Benouis, C.E.; Aida, M.S.; Yakuphanoğlu, F.; Juárez, A. Sánchez

doi:10.1007/s10971-010-2258-x

Cited by 71 publications

(31 citation statements)

References 36 publications

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“…3. The observation of a strong luminescence peak at 395 nm corresponding to 3.14 eV in the UV region of the emission spectra may be identified with near band energy emission and is in agreement with the value reported for ultrasonic spray pyrolysis deposited ZnO films on an FTO substrate [23]. The origin of this peak is usually attributed to the recombination of free excitons through exciton-exciton collision process associated with the transition over the wide direct band gap of ZnO from the ground state to the continuum state [24].…”

Section: Resultssupporting

confidence: 90%

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Paul

Harris

Sharma

et al. 2017

J Mater Sci: Mater Electron

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A conducting polymer, namely poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been employed as an alternative metal counter electrode to study steady state charge conduction through a spin-coated 5.2 µm thick ZnO film in a sandwich structure on a fluorine doped tin oxide coated glass substrate. The room temperature current-voltage characteristics exhibit rectifying behaviour without hysteresis as the bias voltage is cycled between ± 10V for varying voltage sweep rate from 100 to 1000 mV/s. Thermionic emission is believed to be the dominant conduction mechanism at forward bias voltage V ≤ 2.5 V whereas the space charge limited current conduction becomes effective in a higher voltage region V > 2.5 V. The barrier height (φ b ), ideality factor (n) and series resistance (R s ) are found to be strongly temperature dependent parameters showing the increase of b and simultaneous decreases of n and R s within the range of 218-298 K. The behaviour of the temperature dependent charge carrier mobility in the higher voltage region has also been discussed. The use of PEDOT:PSS is quite promising as an alternative to metal electrodes in semiconductor devices.

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Section: Resultssupporting

confidence: 90%

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Paul

Harris

Sharma

et al. 2017

J Mater Sci: Mater Electron

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“…3A. In order to describe the preferred orientation, the texture coefficient (TC (hkl) ) was calculated using the following equation [13]:…”

Section: Resultsmentioning

confidence: 99%

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

et al. 2012

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Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (E U ) was changed inversely with optical band gap of the indium-doped ZnO thin films.

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“…Through the last decades, ZnO thin films and devices have been extensively investigated due to their potential applications in optoelectronic devices and photovoltaic cells.ZnO has attracted researchers in films and devices [1][2], it has intensively grown onto different substrates,like p-type silicon, InP, graphite, as thin films, Schottkybarrier diodes (SBD) and heterostructures (HS) [3][4][5].The ZnO devices based on ZnO have been fabricated by various methods like sputtering [6], spin coating and spray pyrolysis [7][8].The application of ZnO device are various, like gas sensors and solar cells [9][10].In the aim to prepare a photovoltaic device, we fabricate a Schottky diode based on a wide band gap semiconductor ZnO,Eg> 3 eV with a good rectifying behavior. The study's aim is to replace standard Schootky diode by those based on wide band gap oxide semiconductor.…”

Section: Introductionmentioning

confidence: 99%

The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

Benhaliliba¹

2017

J. Fundam and Appl Sci.

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Indium and aluminium-doped ZnO thin films deposited onto FTO substrates: nanostructure, optical, photoluminescence and electrical properties

Cited by 71 publications

References 36 publications

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Hysteresis-free DC conduction in zinc oxide films with a conducting polymer counter electrode

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

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