Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits

Rossetto, Isabella; Meneghini, Matteo; Tomasi, T.; Dai, Yong; Meneghesso, G.; Zanoni, Enrico

doi:10.1016/j.microrel.2012.06.132

Cited by 4 publications

(1 citation statement)

References 7 publications

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“…At the optical power level and the excitation spot size used during the stress, we can estimate a worst-case temperature error of ≈60 °C, referring to the literature. 31) The real error is lower, since the heated area is significantly larger in our case, leading to a lower resolution-related inaccuracy. Additionally, the 60 °C estimate is based on the assumption that all the stress optical power is absorbed and contributes to the temperature increase, whereas the collection efficiency is not 100% owing to surface reflectivity 32,33) and partial absorption.…”

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confidence: 67%

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Santi

Caria

Renso

et al. 2018

Appl. Phys. Express

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We provide experimental evidence that gallium-nitride-based optoelectronic devices can be affected by a photon-driven degradation mechanism unrelated to catastrophic optical damage. Any role of current in such degradation is excluded by stress tests under laser irradiation in the opencircuit configuration; any role of temperature is ruled out by additional thermal tests, showing a different degradation mode. Given the high bond strength of GaN, lattice-damage-related degradation is unlikely. A possible cause, supported by the PL spectra, is the dehydrogenation of gallium vacancies, which causes an increase in the number of optically active defects and requires a removal energy lower than the photon energy.

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confidence: 67%