1969
DOI: 10.1002/pssb.19690310115
|View full text |Cite
|
Sign up to set email alerts
|

Indirect Energy Gap in GaSe and GaS

Abstract: Optical absorption measurements on thick monocrystalline samples of GaSel-& show that in these mixed crystals the lowest energy gap is indirect in the complete range 0 5 x 5 1. These results are contrary to earlier reports which indicate that GaSe is a direct gap semiconductor. I n the case of Gas the absorption spectra allow a tentative identification of the phonons involved in the indirect transition.Optische Absorptionsmessungen an dicken, einkristallinen Proben von GaSel -%SX zeigen, On the basis of their … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

12
74
0

Year Published

1971
1971
2017
2017

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 225 publications
(86 citation statements)
references
References 2 publications
12
74
0
Order By: Relevance
“…Both peaks show varying degrees of red shift with increasing temperature. The full temperature dependence of the band gap of GaS 0.5 Se 0.5 has been reported in [1][2][3]5], and the temperature coefficient of the band gap was shown to be negative. As the peak energy due to a donor-acceptor pair transition should decrease with the band-gap energy, the observed red shift of the two bands is in agreement with the hypothesis of a recombination over donor-acceptor pairs.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Both peaks show varying degrees of red shift with increasing temperature. The full temperature dependence of the band gap of GaS 0.5 Se 0.5 has been reported in [1][2][3]5], and the temperature coefficient of the band gap was shown to be negative. As the peak energy due to a donor-acceptor pair transition should decrease with the band-gap energy, the observed red shift of the two bands is in agreement with the hypothesis of a recombination over donor-acceptor pairs.…”
Section: Resultsmentioning
confidence: 99%
“…The exact nature of the crystalline structure present in a semiconductor may be important in determining the electrical and optical properties of the crystal. It has already been established that different crystal modifications in GaSe lead to slightly different band gaps [5].…”
Section: Introductionmentioning
confidence: 99%
“…Crystals suitable for measurements were obtained by easy cleavage perpendicular to optical c-axis. As grown GaSe is an p-type semiconductor having an indirect band gap with energies of 2.065 and 2.075 eV at 77 and 4.2 K, respectively [17].…”
Section: Methodsmentioning
confidence: 99%
“…The GaS crystalline structure consists of double layers of gallium and sulfur with strong intralayer metal-metal bonds (S-Ga-Ga-S sheets) that are stacked along the c-axis via weak van der Waals forces. This combination gives rise to strongly anisotropic optical, electrical and mechanical properties, and makes GaS -which is a wide-bandgap semiconductor 6 -a promising candidate for assorted optoelectronic devices and sensors, e.g., nearblue light-emitting diodes 7 and¯eld-emission-based devices. 8,9 In addition, nanomaterials from layered metal sul¯des in general, and GaS in particular, can intercalate foreign atoms, yielding electrochemical properties that render them suitable for rechargeable secondary batteries.…”
Section: Introductionmentioning
confidence: 99%