Indirect atomic absorption spectrometric determination of silicon in gallium arsenide using an amplification reaction

Taddia, Marco; Clauser, Giuseppe

doi:10.1007/bf00325802

Cited by 4 publications

(1 citation statement)

References 14 publications

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“…ICP optical emission spectrometry [ 15 , 16 , 17 , 18 , 19 ], AAS atomic absorption spectrometry [ 20 , 21 , 22 , 23 , 24 , 25 ], X-ray XRF and fluorescence [ 26 ] are increasingly widely used to determine silicon in various materials. The ICP-OES or ICP-AES technique (the same technique; different abbreviations are given by the authors) measurement parameters include the selection of the analytical line, selection of plasma observation conditions, gas flow rate, radio frequency generator power, photomultiplier voltage, integration time and the amount of sample to be administered.…”

Section: Introductionmentioning

confidence: 99%

A New Approach to the Determination of Silicon in Zinc, Lead-Bearing Materials and in Waste Using the ICP-OES Method

2022

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This work describes the implementation of the ICP-OES silicon determination method for zinc and lead-bearing materials and waste at the Mining and Metallurgical Works ZGH “Bolesław”. The proposed method was validated. On the basis of linearity tests, it was found that the course of the calibration curve is linear up to a silicon concentration of 100 mg/L, with the determined working range being 0.10–50%. Precision tests, on the basis of which the repeatability was checked, were carried out for nine types of real samples: zinc sulfides, zinc oxides, zinc-lead ore, lead sulfide and zinc-bearing waste. Real samples and six certified reference materials were tested using the ICP-OES radial position. The identified interferences of molybdenum, chromium and vanadium did not statistically significantly affect the measurement results.

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