2020
DOI: 10.1016/j.jmmm.2019.165880
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Indication of above-room temperature magnetoelectricity in CoFe2O4/Cr2O3 nanocomposite

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Cited by 13 publications
(12 citation statements)
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“…There is one-to-one correspondence between the variation of micro-strain and (2β/d) with the change in CZFMO concentrations. So the magneto electric coefficient is the contributions of interfacial phenomena mediated through the strain, but not due to the bulk phenomena 58 . The value of (3γ/d) is found to be negative and the value is very small (~ × 10 −7 mV/cm-Oe 3 ).…”
Section: Results Discussionmentioning
confidence: 99%
“…There is one-to-one correspondence between the variation of micro-strain and (2β/d) with the change in CZFMO concentrations. So the magneto electric coefficient is the contributions of interfacial phenomena mediated through the strain, but not due to the bulk phenomena 58 . The value of (3γ/d) is found to be negative and the value is very small (~ × 10 −7 mV/cm-Oe 3 ).…”
Section: Results Discussionmentioning
confidence: 99%
“…In this equation, the first and second terms stand for FiM contribution and the last term for paramagnetic contribution. 50–52 where and ; I = 1, 2. Here ( H + H c i ) and ( H − H c i ) are used for fitting the data of two arms (decreasing and increasing field) of M – H loops.…”
Section: Resultsmentioning
confidence: 99%
“…In this equation, the first and second terms stand for FiM contribution and the last term for paramagnetic contribution. [50][51][52]…”
Section: Magnetic Studymentioning
confidence: 99%
“…RT polarization–electric field ( P – E ) hysteresis loops are measured by a Precision II ferroelectric loop tracer interfaced with a 10 kV high-voltage amplifier (Trek), and then the data are collected with the help of Vision Data Acquisition Software in a Precision Materials analyzer from Radiant Technologies, Inc. The internal impedance of the device is measured using a lock-in-amplifier (SR830) . The alternating-current (ac) conductivity (σ ac ) of the film samples is calculated in terms of impedance ( z ) as follows: σ ac = d A .25em Z Z 2 + Z 2 where A is the area, d is the thickness of the film sample, and Z ′ and Z ″ are the real and imaginary parts of the impedance, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The internal impedance of the device is measured using a lock-inamplifier (SR830). 23 The alternating-current (ac) conductivity (σ ac ) of the film samples is calculated in terms of impedance (z) 24 as follows:…”
Section: Characterization Techniquesmentioning
confidence: 99%