Index Profile Reconstruction of Ti: LiNbO3 Structures and Loss Bending Evaluation from Near-Field Measurements

Tavlykaev, Robert F.; Kückelhaus, K.; Voges, E.

doi:10.1515/joc.1994.15.2.71

Cited by 8 publications

(1 citation statement)

References 16 publications

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“…Up to date, lithium niobate (LN) is the most promising material for modulators in that LN enables strong Pockels effect. However, modulators based on bulk LN have a low confinement for the optical mode, resulting in large footprints and low modulation efficiency [8,9]. These shortcomings make bulk LN-based modulators incompatible with complex PICs.…”

Section: Introductionmentioning

confidence: 99%

A Heterogeneous Silicon on Lithium Niobate Modulator for Ultra-Compact and High-Performance Photonic Integrated Circuits

Wang

Chen

et al. 2021

IEEE Photonics J.

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We propose a heterogeneous silicon on lithium niobate (Si-LN) modulator which improves the compactness and modulating performance of large-scale photonic integrated circuits. Two types of configurations are employed on the Si-LN wafer for ultra-compact light-routing waveguides and high-performance light-modulating waveguides, respectively. The low loss taper transfers the optical modes between the two waveguides. In the heterogeneous Si-LN modulator, LN etching is nonessential and thus device processes are supported on a robust wafer. Our design analyzes the influence of the LN thickness on the performance. According to theoretical analysis and numerical simulation, the modulator supports a bend radius of 10 m and edge-to-edge waveguide separation of 0.7 m with respect to ~1 cm beat length. When thickness of LN is 700 nm, the modulation efficiency reaches 1.76 Vcm and the bandwidth exceeds 350 GHz. This modulator is potentially suitable for ultra-compact, large-scale, high efficiency, and large bandwidth photonic integrated circuits (PICs).

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Section: Introductionmentioning

confidence: 99%