Index-Coupled Quantum-Dot 1.3-$\mu$m Distributed-Feedback Lasers Fabricated With a Combination MOCVD/MBE Process

Hu, Junjie; Klotzkin, D.; Huang, Jia-Sheng; Sun, Xiaoqing; Li, Neinyi

doi:10.1109/lpt.2010.2099214

Cited by 5 publications

(5 citation statements)

References 8 publications

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“…At moderate temperatures an AlGaAs upper cladding were grown, accepting changes in grating form and a QD photoluminescence shift to shorter wavelengths. 15 Their devices achieved 40 dB SMSR and a slope efficiency of 0.25 W/A within a limited operation range. Substituting the upper cladding by InGaP has led to improved slope efficiency of 0.30 W/A, a 45 dB SMSR, and open eyes at 10 Gb/s.…”

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confidence: 99%

“…10 High-speed characteristics and temperature stability of the threshold current of QD lasers is improved by p-doping of the active region. 11 Within the last years, several groups [12][13][14][15][16] have developed alternative concepts to realize QD DFB lasers. Since QDs can degrade at high growth temperatures, induced by indium depletion, the common technique of quantum-well (QW) DFB laser fabrication using an overgrowth step was avoided by implementation of lateral metal gratings.…”

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confidence: 99%

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15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μm InGaAs quantum dots

Stubenrauch

Stracke

Arsenijević

et al. 2014

Applied Physics Letters

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The static properties and large-signal modulation capabilities of directly modulated p-doped quantum-dot distributed-feedback lasers are presented. Based on pure index gratings the devices exhibit a side-mode-suppression ratio of 58 dB and optical output powers up to 34 mW. Assisted by a broad gain spectrum, which is typical for quantum-dot material, emission wavelengths from 1290 nm to 1310 nm are covered by the transversal and longitudinal single-mode lasers fabricated from the same single wafer. Thus, these lasers are ideal devices for on-chip wavelength division multiplexing within the original-band according to the IEEE802.3ba standard. 10 Gb/s data transmission across 30 km of single mode fiber is demonstrated. The maximum error-free data rate is found to be 15 Gb/s.

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confidence: 99%

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confidence: 99%

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μm InGaAs quantum dots

Stubenrauch

Stracke

Arsenijević

et al. 2014

Applied Physics Letters

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“…The inset of Figure shows an output spectrum of the LC-DFB working at RT under CW operation. At a drive current of 55 mA, the laser shows a single longitudinal mode operation with an SMSR as high as 51 dB, which is much higher than the value of a similar-type laser by recent reports. ,, Stubenrauch et al realized a 10 Gb/s data transmission across 30 km of a single-mode fiber by using an 800 μm long p-doped InGaAs QD DFB laser . It is worth noting that the LC-DFB laser we fabricated has a much shorter cavity of 500 μm and as-cleaved facets.…”

Section: Resultsmentioning

confidence: 73%

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

Wang

Zhang

et al. 2017

ACS Photonics

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Multiple-layer InAs/GaAs quantum dot (QD) laser structures were etched to remove the p-side AlGaAs cladding layers to investigate the temperature-dependent photoluminescence (PL) characteristics. Four QD samples, including undoped as grown QDs, p-doped as grown QDs, undoped annealed QDs, and p-doped annealed QDs, were prepared by molecular beam epitaxy (MBE) and a postgrowth annealing process for comparison. Among them, modulation p-doped QD samples exhibit much less temperaturedependent characteristics of PL spectra and notable insensitivity to intermixing compared to undoped ones. This is attributed to the effects of modulation p-doping, which can inhibit holes' thermal broadening in their closely spaced energy levels and significantly suppress In/Ga interdiffusion between QDs and their surrounding matrix. These results provide greater freedom in the choice of MBE growth for high-quality active regions and claddings of QD laser diodes. The superior features of the modulation p-doped QD materials have been transferred naturally to the laser devices. The continuous-wave ground-state (GS) lasing has been realized in both p-doped QD Fabry−Perot (F−P) and laterally coupled distributed-feedback (LC-DFB) narrow ridge lasers with very short cavity length without facet coatings, in which a 1315 nm GS lasing has been found in a F−P laser with a 400 μm cavity length, while single longitudinal mode lasing with a very large tunable range of 140 nm and side mode suppression ratio of 51 dB is achieved in an LC-DFB laser. This work demonstrates great development potential of InAs/GaAs QD lasers for applications in high-speed fiber-optic communication.

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“…These minibands can be further investigated for photon absorption and carrier transport. Realistically, numerous fabrication QD processes have been reported, [3][4][5][6][7][8][9][10] yet the experimental results only reveal the possibility of fabricating larger QD (diameter or thickness greater than 10 nm). By combining a self-assembled ferritin biotemplate, we have advanced a topdown nanofabrication methodology, damage-free neutral beam etching 11,12) (NBE), which has been applied to fabricate high-quality discoid QDs of sub-10-nm size, [13][14][15][16] which will benefit the investigation of minute-sized QDs.…”

Section: Introductionmentioning

confidence: 99%

Miniband formulation in Ge/Si quantum dot array

Tsai¹,

Lee²,

et al. 2016

Jpn. J. Appl. Phys.

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Enhanced quantum confinement due to nonuniform composition in alloy quantumdots M Z Hossain, N V Medhekar, V B Shenoy et al.In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband's bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters.

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Index-Coupled Quantum-Dot 1.3-$\mu$m Distributed-Feedback Lasers Fabricated With a Combination MOCVD/MBE Process

Cited by 5 publications

References 8 publications

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μm InGaAs quantum dots

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μm InGaAs quantum dots

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

Miniband formulation in Ge/Si quantum dot array

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