2012
DOI: 10.1007/s00339-012-6820-y
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Incubation effect and its influence on laser patterning of ITO thin film

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Cited by 34 publications
(11 citation statements)
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“…The hole diameter visibly increases when the number of pulses is increased, suggesting the presence of damage accumulation. The phenomenon was first reported by Jee et al [23], followed by extensive application to the ablation of various materials, including TiN [24][25][26], using ultrashort ps-fs pulses. The damage accumulation effect is expressed as a reduction in the threshold fluence as:…”
Section: Multiple-pulse Studymentioning
confidence: 95%
See 1 more Smart Citation
“…The hole diameter visibly increases when the number of pulses is increased, suggesting the presence of damage accumulation. The phenomenon was first reported by Jee et al [23], followed by extensive application to the ablation of various materials, including TiN [24][25][26], using ultrashort ps-fs pulses. The damage accumulation effect is expressed as a reduction in the threshold fluence as:…”
Section: Multiple-pulse Studymentioning
confidence: 95%
“…The damage accumulation observed on the processing of polymeric materials (PMMA) with UV light was attributed to the photoinduced formation of defect centres, which enhanced the absorption of UV light (τ = 20 ns, λ = 248 nm PRR = 2 Hz) [25]. More recently, damage accumulation during the laser micromachining of ITO semiconductors was attributed to the accumulation of plastic deformation (τ = 10 ps, λ = 1064 nm PRR = 200-1000 kHz) [26]. In this study, the damage accumulation observed on TiN fits better with the increase in absorption due to changes in surface topography, as can be observed from the SEM images.…”
Section: Multiple-pulse Studymentioning
confidence: 98%
“…[16][17][18] This interesting phenomenon, referred in the literature as incubation effect, can be explained by the changes in absorption of the incident laser radiation caused by the creation of radiation-induced defects on the surface of the irradiated material. [16][17][18] The enhanced absorption leads to surface melting with the further increase in the number of subsequent laser pulses.…”
Section: Resultsmentioning
confidence: 99%
“…[16][17][18] This interesting phenomenon, referred in the literature as incubation effect, can be explained by the changes in absorption of the incident laser radiation caused by the creation of radiation-induced defects on the surface of the irradiated material. [16][17][18] The enhanced absorption leads to surface melting with the further increase in the number of subsequent laser pulses. In fact, single pulse melting threshold of ZnO nanoparticles submitted to UV KrF* excimer laser irradiation (248 nm wavelength and 20 ns pulse width) 19 or to UV ArF* excimer laser irradiation (193 nm wavelength and 15 nm pulse width) 20 was reported to be around 130 mJ/cm 2 , corresponding to 6.5 MW/cm 2 or 8.6 MW/cm 2 pulse intensity, respectively, well above our lowest, 10 mJ/cm 2 , fluence value equivalent to 2.5 MW/cm 2 .…”
Section: Resultsmentioning
confidence: 99%
“…This can be attributed to the so-called "incubation effect" that takes place during multi-pulses laser ablation as well as the different surface conditions on the actual samples [76].…”
Section: Temperature and Vapour Pressurementioning
confidence: 99%