Increasing the spatial resolution of direct laser writing by using a non-Gaussian intensity distribution in the writing laser spot

Abstract

Due to the threshold nature of the thermochemical oxidation process, it is possible to use a non-Gaussian intensity distribution within the writing spot, for increasing of spatial resolution of direct laser writing technology. The non-Gaussian distribution was obtained by distorting the Gaussian beam with an annular diaphragm. The width of the central peak (FWHM) is 40% smaller than the width of the Gaussian spot. It has been shown that by distorting the Gaussian spot, a smaller single line width can be obtained. The effect of side lobes during multipass writing on the width of the resulting single line was studied.

Thermochemical laser writing of silicide masks on dual-layer films a-Si/Cr

“…In Figure 9, it's also noteworthy that, unlike writing on Cr films, when writing on a-Si/Cr, a sharper power threshold is observed, above which thermochemical processes stop (or significantly slow down), and with a further increase in power, only a change in the duty cycle of the formed structures occurs (until reaching the melting threshold of the material). This property can be used in the future to further enhance the spatial resolution of thermochemical writing on a-Si/Cr films by writing with a Gaussian beam peak and/or using a non-Gaussian laser beam [11].…”