2007
DOI: 10.1002/pssa.200521450
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Increased optical damage resistance in Ce:Cu:LiNbO3 by doping with Sc2O3 for quasi‐nonvolatile holographic storage

Abstract: A series of Sc:Ce:Cu:LiNbO3 crystals were prepared using the Czochralski method and the occupation mechanism of the dopants is discussed in terms of the results of infrared and UV–visible spectra. The optical damage resistance ability and quasi‐nonvolatile holographic properties of the samples were also obtained. The defect structure is discussed, accounting for the optical damage resistance and two‐photon holographic response speed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Cited by 12 publications
(7 citation statements)
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“…According to Li site vacancy model, since the ratio of Li/Nb is less unity in the congruent LiNbO 3 crystal, some intrinsic defects including V Li À (Li vacancies) and Nb Li 4+ (anti-site Nb) will always appear [20]. Therefore, the complex defect (Nb Li 4+ -V Li À -OH À ) will be mainly responsible for the OH stretching vibration peak at 3482 cm À1 [21,22]. While in Ce:Cu:LiNbO 3 crystals, Ce and Cu of doping ions will preferentially substitute the Li of Hf begin to merge into normal Nb sites to form the defects of Hf Nb À .…”
Section: Resultsmentioning
confidence: 97%
“…According to Li site vacancy model, since the ratio of Li/Nb is less unity in the congruent LiNbO 3 crystal, some intrinsic defects including V Li À (Li vacancies) and Nb Li 4+ (anti-site Nb) will always appear [20]. Therefore, the complex defect (Nb Li 4+ -V Li À -OH À ) will be mainly responsible for the OH stretching vibration peak at 3482 cm À1 [21,22]. While in Ce:Cu:LiNbO 3 crystals, Ce and Cu of doping ions will preferentially substitute the Li of Hf begin to merge into normal Nb sites to form the defects of Hf Nb À .…”
Section: Resultsmentioning
confidence: 97%
“…The calculated results are shown in Table 1. It can be seen from the figure that the trend of the lattice constant of all the samples increases first and then decreases with the increase [24]. Doping Hf 4+ , Yb 3+ , and Nd 3+ ions would substitute Nb 4+ Li and occupy V −…”
Section: Xrd Diffraction Analysismentioning
confidence: 96%
“…Electric fixing [3] and thermal fixing [4] method can be used to solved this problem, but both the treatment process are very complicated. Up to now, simple two-photon holographic storage is developed to realized the nonvolatile storage of the information and many double-doped LiNbO 3 crystals with two different defect levels are applied in this field [5,6]. Mn:Fe:LiNbO 3 crystal is an excellent material used for the two-photon holographic storage, but long recording time and low signal-to-noise ratio limited its practical application [7,8].…”
Section: Introductionmentioning
confidence: 99%