IEEE Electron Device Lett.
 1988
DOI: 10.1109/55.705
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Increased current gain and suppression of peripheral base currents in silicide self-aligned narrow-width polysilicon-emitter transistors of an advanced BiCMOS technology

M. El-Diwany
1
,
M.P. Brassington
2
,
P. Tuntasood
3
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Cited by 14 publications
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