Increase of parasitic resistance in shallow p/sup +/ extension by SiN sidewall process and its improvement by Ge preamorphization for sub-0.25-μm pMOSFET's

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature.

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Increase of parasitic resistance in shallow p/sup +/ extension by SiN sidewall process and its improvement by Ge preamorphization for sub-0.25-μm pMOSFET's

Cited by 7 publications

References 17 publications

Auto-correlation function analysis of phase formation in iron ion-implanted amorphous silicon layers

Auto-correlation function analysis of phase formation in iron ion-implanted amorphous silicon layers

Randomization of heavily damaged regions in annealed low energy Ge+-implanted (0 0 1)Si

Evolution of structural order in germanium ion-implanted amorphous silicon layers

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