Increase of Fe solubility in ZnO induced by the grain boundary adsorption

Protasova, S. G.; Straumal, Boris B.; Мазилкин, А. А.; Stakhanova, S.V.; Straumal, P. B.; Baretzky, B.

doi:10.1007/s10853-014-8146-y

Cited by 80 publications

(38 citation statements)

References 107 publications

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“…6 We could detect an extra phase whose total contribution is less than 2% of the rhombohedral and the contribution from such extremely minor phase, if really non-negligible, can be included in the contribution from grain boundary disorder and free surface, whose effect surface has been discussed for various alloyed compounds. 34,35 In fact many reports highlighted the role of surface defects at the interfaces of metal electrodes and magnetic semiconductor for the NDR effect, e.g., in Pt/TiO 2 /Pt device. 26 In such interfaces, oxygen vacancy and Schottky barrier determine the trapping and de-trapping of charge carriers, and space charge limited current (SCLC) mechanism controls I-V characteristics.…”

Section: Summary Of the Results And Discussionmentioning

confidence: 99%

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Bhowmik

Vijayasri

2015

AIP Advances

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We have studied current-voltage (I-V) characteristics of α-Fe1.64Ga0.36O3, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔVP) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

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Section: Summary Of the Results And Discussionmentioning

confidence: 99%

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Bhowmik

Vijayasri

2015

AIP Advances

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“…B. Straumal et al [9] reported that grain boundaries can accumulate approximately two to four times more cobalt or manganese than free surfaces in thin zinc oxide films. S. G. Protasova et al [10] reported the Fe accumulation ability of grain boundaries is about 10 times higher than that of free surfaces in thin zinc oxide films. In conclusion, the accumulation of doping irons on grain boundaries and free surfaces drastically shifts their solubility limit in dielectric materials towards higher concentrations.…”

Section: Introductionmentioning

confidence: 98%

“…3 Results and discussion Figure 1 shows the XRD patterns of Zn 3 Recently, several authors have reported the influence of defects and doping atoms in the amorphous surficial, interficial and intergranular layers [9][10][11]. B.…”

Section: Introductionmentioning

confidence: 99%

Structure and properties analysis for Zn3Nb2O8 and (Zn0.95M0.05)3Nb2O8 (M = Ni, Co, Mg and Mn) microwave dielectric materials

Sun

et al. 2015

J Mater Sci: Mater Electron

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Single phase of Zn 3 Nb 2 O 8 and (Zn 0.95 M 0.05 ) 3 Nb 2 O 8 (M = Ni, Co, Mg and Mn) ceramics are prepared through the solid-state ceramic route and synthetized at the sintering temperature of 1160°C. The X-ray diffraction results showed that all samples exhibit a single monoclinic structure. The dielectric constant (e) was affected by the relative density and the dielectric polarizability. The quality factor (Qf) increased with the increase of the packing fraction. The temperature coefficient of resonant frequency (s f ) moved toward positive due to the increase of A-site bond valence.

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“…Many studies on Mn x Zn 1 − x O compounds were reported in literatures [8][9][10][11][12][13] in the recent past to explain the observed ferromagnetism in the above system. Among them, contributions by Straumal et al 14,15 and Protasova et al 16 regarding the modulation of the physical properties of pure and doped nanograined ZnO in the presence of defects such as interphase boundaries and grain boundaries are noteworthy. They analyzed a large number of experimental results with respect to the ratio of grain boundary (GB) area to grain volume.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Manganese‐Doped NanocrystallineZinc Oxide/Polyvinylidene Fluoride Flexible Composite Thin Films Deposited by the Sol–Gel Method

et al. 2016

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Mn-doped nanocrystalline ZnO (Mn x Zn 1-x O) was incorporated in the polyvinylidene fluoride thin film for obtaining the free-standing flexible film by the sol-gel technique. The effect of Mn-ZnO loading on the optical and microstructural properties of the Mn-ZnO/polyvinylidene fluoride (PVDF) composite films was studied critically for the as-deposited and the poled samples. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were carried out to study the bonding environment. The XPS spectra recorded for poled samples from the fluorine-terminated surface showed a very strong peak at ß695 eV for F1s arising due to C-F bonds. Raman studies showed the presence of the predominant β phase of PVDF in the sample. Peaks related to ZnO nanocrystals were also observed in the Raman spectra. Photoluminescence spectra indicated a strong emission band at ß2.79 eV in the ultraviolet region arising out of near band edge emission of free excitons. C

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Increase of Fe solubility in ZnO induced by the grain boundary adsorption

Cited by 80 publications

References 107 publications

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe1.64Ga0.36O3 oxide

Structure and properties analysis for Zn3Nb2O8 and (Zn0.95M0.05)3Nb2O8 (M = Ni, Co, Mg and Mn) microwave dielectric materials

Structural and Optical Properties of Manganese‐Doped NanocrystallineZinc Oxide/Polyvinylidene Fluoride Flexible Composite Thin Films Deposited by the Sol–Gel Method

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