Abstract:Immersion in a peroxide solution was found to increase electrical conductivity in p-GaN. Auger electron spectroscopy, current–voltage, and Hall measurements were used for characterization. All samples in this study were grown on the c plane of sapphire substrates by molecular beam epitaxy using solid Ga and ratio frequency plasma-activated N2 source with a hole concentration of 1.1×1017 cm−3. The samples were first cleaned in boiling aqua regia (3HCl+1HNO3) for 10 min, rinsed in de-ionized (DI) water, and blow… Show more
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