Incorporation of Si in InAlAs grown by low pressure metal-organic chemical vapor deposition assessed by optical and transport measurements

Abstract

Articles you may be interested inStructural and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposition Electrical and optical studies of metal organic chemical vapor deposition grown N-doped ZnO films Correlation between exciton-phonon interaction and electrical conductivity for unintentionally-doped ZnO epilayers grown by metal-organic chemical vapor deposition J. Appl. Phys. 104, 093515 (2008); 10.1063/1.3008008 Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method J. Vac. Sci. Technol. B 22, 624 (2004); 10.1116/1.1667509Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphineWe present a study of Si incorporation in InAlAs layers grown lattice matched on InP substrates by low pressure metal-organic chemical vapor deposition. Distinct Si doping levels are achieved for different values of diluted flows of SiH 4 . Photoluminescence, capacitance-voltage, and Hall measurements are used to characterize the samples. In order to investigate a possible autocompensation effect, the samples were subjected to a heat treatment. Analysis of the photoluminescence spectra before and after annealing, with the help of a fitting procedure, reveals that Si is also incorporated as an acceptor in the sublattice V. The position of the acceptor peak is consistent with our theoretical calculations. Photoluminescence measurements as a function of temperature show the anomalous inverted S-shape behavior. The analysis of the fitted spectra gives support to a carrier localization effect.

Dopagem Carbono Em Camadas Epitaxiais De Inalas

“…Em moduladores de eletroabsorção esta característica é de extrema importância, porque facilita o escape dos buracos. A utilização de InAlAs em dispositivos eletrônicos e optoeletrônicos depende da possibilidade de se obter elevada dopagem, tanto p quanto n. A dopagem n não apresenta dificuldades em ser obtida [4].…”