Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties

Optical Properties of Metal Nanoparticles with Arbitrary Shapes

“…Typically, the estimation of the shape and size of nanoparticles has been done using techniques like Atomic Force Microscopy (AFM), Scanning Tunneling Microscopy (STM), Transmission Electron Microscopy (TEM) and Reflection High-Energy Electron Diffraction (RHEED) [2,5,6,7,8]. These techniques provide the image of a small piece of the sample, this means that they give information about local properties by characterizing a few nanoparticles at a time.…”

“…Typically, the estimation of the shape and size of nanoparticles has been done using techniques such as atomic force microscopy (AFM), scanning tunneling microscopy (STM), transmission electron microscopy (TEM), and reflection high-energy electron diffraction (RHEED). − These techniques provide the image of a small piece of the sample, and this means that they give information about local properties by characterizing a few nanoparticles at a time. Different shapes of nanoparticles have been reported with the use of these techniques, such as spheres, spheroids, lens-shaped, cone-shaped, pyramids with different facets, truncated pyramids, and different types of polyhedra. ,− A vast amount of information has been obtained through these “structural-characterization techniques”; however, they still have some limitations.…”

Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

“…The most promising way to get such integration is by fabrication of III-V-based light emitters on Si substrates for the 1.3-1.55 µm range [4]. Numerous studies of the growth of InAs quantum dots (QDs) embedded in silicon have been performed during the last few years [5][6][7]. Recently we have grown a GaAs layer with embedded InGaAs islands on a Si substrate with a Si 1−x Ge x step-graded buffer layer, which exhibited intense photoluminescence (PL) in the region of 1.3 µm at room temperature [8].…”