Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit

Fédéli, Jean Marc; Migette, M.; Cioccio, L. Di; Melhaoui, L. El; Orobtchouk, Régis; Seassal, Christian; Rojo-Romeo, P.; Mandorlo, Fabien; Marris‐Morini, Delphine; Vivien, Laurent

doi:10.1109/group4.2006.1708212

Cited by 25 publications

(15 citation statements)

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“…Finally, a-Si:H is deposited at low temperature and is compatible with standard CMOS technology. a-Si:H based photonics can be considered as an alternative technology to SOI for integrating photonic functions on CMOS [29][30][31][32][33]. Our results raise the prospect for a-Si:H to provide a truly practical and viable, high performance, platform for nonlinear photonic applications in the telecommunications wavelength window.…”

Section: Resultsmentioning

confidence: 85%

Amorphous silicon nanowires combining high nonlinearity, FOM and optical stability

Grillet¹,

Carletti²,

Monat³

et al. 2012

Opt. Express

119

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Section: Resultsmentioning

confidence: 85%

Amorphous silicon nanowires combining high nonlinearity, FOM and optical stability

Grillet¹,

Carletti²,

Monat³

et al. 2012

Opt. Express

119

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show abstract

“…Amorphous silicon, studied as a nonlinear material [117] and platform for linear photonics [118,119] for some time, was recently proposed [120] as an alternative to SOI for nonlinear optics in the telecom band. Although initial measurements yielded a FOM no better than c-Si (~0.5) [120,121], more recent results have shown FOMs ranging from 1 [122] to as high as 2 [123,124], allowing very high parametric gain (+26dB) over the C-band [125].…”

Section: Future Challenges Opportunitiesmentioning

confidence: 99%

New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

et al. 2013

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“…While amorphous silicon has been studied as a nonlinear material for some time [55], and developed as a platform for linear photonics in the telecom band for a number of years [56,57], only recently has it been proposed [58] as an alternative to SOI for nonlinear optics in the telecom band, with the hope that a-Si could possibly offer lower TPA than silicon. Table 2.2 surveys the measured nonlinear properties for a-Si, which show a near universal improvement in both the nonlinearity and FOM over c-Si.…”

Section: Platformsmentioning

confidence: 99%

CMOS Compatible Platforms for Integrated Nonlinear Optics

Moss

Morandotti

2015

Springer Series in Optical Sciences

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Nonlinear photonic chips are capable of generating and processing signals all-optically with performance far superior to that possible electronicallyparticularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation that is an intrinsic property of silicon's bandstructure. We review recent progress in new non-silicon CMOScompatible platforms for nonlinear optics, focusing on Hydex glass and silicon nitride, and briefly discuss the promising new platform of amorphous silicon. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation, ultrafast optical pulse generation and measurement. We highlight their potential future impact as well as the challenges to achieving practical solutions for many key applications. IntroductionAll-optical signal generation and processing [1, 2] have been highly successful at enabling a vast array of capabilities, such as switching and de-multiplexing of signals at unprecedented speeds [3,4], achieving parametric gain [5] on a chip, Raman lasing [6], wavelength conversion [7], optical logic [8], all-optical regeneration [9, 10], radio-frequency (RF) spectrometers operating at THz speeds [11,12], as well as entirely new functions such as ultra-short pulse measurement [13,14] and generation [15] on a chip, optical temporal cloaking [16], and many others. Phase sensitive functions [14,17], in particular, will likely be critical for

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Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit

Cited by 25 publications

References 1 publication

Amorphous silicon nanowires combining high nonlinearity, FOM and optical stability

Amorphous silicon nanowires combining high nonlinearity, FOM and optical stability

New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

CMOS Compatible Platforms for Integrated Nonlinear Optics

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