We demonstrate experimentally the bistable nature of the bright spatial solitons in a semiconductor microresonator and show that they can be created and destroyed by incoherent local optical injection.PACS 42.65.Sf; 42.65.Tg; 42.70.Nq Spatial optical solitons i.e. light beams propagating without transverse spreading arise when diffraction is balanced by a nonlinear process such as self-focussing in a nonlinear dispersive or reactive medium. Light propagating inside an optical resonator filled with a nonlinear medium can thus form stable filaments, or localized structures (spatial solitons). These are free to move in the resonator cross section (or move by themselves [1]) which implies their bistability, and ability to carry information. The mobility of spatial solitons, however, makes them different from arrangements of fixed binary elements, so that new types of information processing have been considered, making use of spatial resonator solitons.Early realisations of such resonator solitons in slow materials were given in [2,3]. We investigated in the past spatial resonator solitons of phase-type [4] and intensity type [5], including experiments demonstrating large simultaneous collections of solitons [6] and their manipulation [5] as is required for practical applications. These experiments were conducted using slow nonlinear materials for the sake of easy observeability of the complex 2D space-time dynamics. For practical purposes, however, speed is of prime importance and compatibility with semiconductor technology is desirable. Spatial solitons and their switching in semiconductor microresonators have therefore been predicted theoretically recently [7,9]. With the aim of realizing spatial solitons in semiconductor resonators, experiments were conducted recently, addressing passive resonators [10] and resonators with population inversion [11]. We showed the spontaneous formation of bright and dark spatial solitons in [12]. We confirm here the bistable nature of the bright spatial semiconductor resonator solitons by the results of local switching experiments and demonstrate the incoherent writing and erasing of the bright solitons.The experimental arrangement (FIG. 1) was essentially as described in [10] and [12]. Light of a Ti:Al 2 O 3 -laser around 855 nm wavelength illuminates the semiconductor resonator sample. This consists of two Bragg mirrors of about 99,5 % reflectivity and 18 pairs of GaAs/GaAlAsquantum-wells between them. The band edge and the wavelength of the exciton line is at 849 nm. Observations are done in reflection because the substrate material (GaAs) is opaque at the working wavelength.The laser light is modulated by a mechanical chopper to limit illumination to durations of a few µs, in order to avoid thermal nonlinear effects. The repetition rate of the illuminations is 1 kHz, permitting stroboscopic