Incoherent imaging of zone axis crystals with ADF STEM

Loane, Russell F.; Xu, Ping; Silcox, J.

doi:10.1016/0304-3991(92)90054-n

Cited by 183 publications

(108 citation statements)

References 33 publications

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“…In many cases these additional reflections are so weak that if they are filtered out, the image does not look any different. (In those rare cases where a good signal to noise ratio can be obtained, and the probe shape is known, measured and can be deconvolved, this is a legitimate method to increase the information limit (Howie, 1979;Loane et al, 1992;Shin et al, 1989;McGibbon et al, 1999).…”

Section: Image Delocalization In Stemmentioning

confidence: 99%

Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Diebold¹,

Foran²,

Kisielowski

et al. 2003

Microsc Microanal

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High Resolution Transmission Electron Microscopy (HR-TEM) has been usedas the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods.Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error.In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

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Section: Image Delocalization In Stemmentioning

confidence: 99%

Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Diebold¹,

Foran²,

Kisielowski

et al. 2003

Microsc Microanal

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“…[27][28][29][30] In terms of spectroscopy, both EDX and EEL signals can be simultaneously acquired, thereby providing atomically-resolved chemical and electronic information.…”

Section: Introductionmentioning

confidence: 99%

Experimental verification of orbital engineering at the atomic scale: Charge transfer and symmetry breaking in nickelate heterostructures

et al. 2017

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Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO 3 , where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the electronic/magnetic properties can be altered as a function of epitaxial strain, layer thickness and superlattice structure. One such recent example is the tri-component LaTiO 3 -LaNiO 3 -LaAlO 3 superlattice, which exhibits charge transfer and orbital polarization as the result of its interfacial dipole electric field. A crucial step towards control of these parameters for future electronic and magnetic device applications is to develop an understanding of both the magnitude and range of the octahedral networks response towards interfacial strain and electric fields.An approach that provides atomic-scale resolution and sensitivity towards the local octahedral distortions and orbital occupancy is therefore required. Here, we employ atomic-resolution imaging coupled with electron spectroscopies and first principles theory to examine the role of interfacial charge transfer and symmetry breaking in a tricomponent nickelate superlattice system. We find that nearly complete charge transfer occurs between the LaTiO 3 and LaNiO 3 layers, resulting in a Ni 2+ valence state. We further demonstrate that this charge transfer is highly localized with a range of about 1 unit cell, within the LaNiO 3 layers. The results presented here provide important feedback to synthesis efforts aimed at stabilizing new electronic phases that are not accessible by conventional bulk or epitaxial film approaches.PACS numbers:

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“…In the case of [001] grown III-V semiconductors viewed along the <110> direction, the important quality of interfacial sharpness is often evaluated by 2 examining the change in the ratio of the Group III and Group V column intensities in each dumbbell across layer boundaries. In this approach, the level of sharpness is given by the distance over which the column ratio switches in value across the boundary [13][14][15][16][17]. This distance is called the transition region of the boundary.…”

Section: Introductionmentioning

confidence: 99%

Column ratio mapping: A processing technique for atomic resolution high-angle annular dark-field (HAADF) images

Robb

Craven

2008

Ultramicroscopy

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Incoherent imaging of zone axis crystals with ADF STEM

Cited by 183 publications

References 33 publications

Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Thin Dielectric Film Thickness Determination by Advanced Transmission Electron Microscopy

Experimental verification of orbital engineering at the atomic scale: Charge transfer and symmetry breaking in nickelate heterostructures

Column ratio mapping: A processing technique for atomic resolution high-angle annular dark-field (HAADF) images

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