Abstract:Our simulation method which was derived for athermal motion of flexible dislocations through obstacle arrays is extended to include thermally activated glide. The deterministic differential equations which describe the dynamics of dislocation motion get an additional stochastic term corresponding to thermal motion of atoms involved. Our approach is based on publications of Langevin, Fokker‐Planck, and Klein‐Kramers. The investigation of jerky glide reveals that there is an essential influence of the kinetic en… Show more
“…Their simulation system focused on two dimensional problems [6,7]. Hiratani and Zbib [8,9] extended the model proposed by Rönnpagel et al [6] to three-dimensional simulations and used it to simulate dislocation glide through weak obstacles which were represented by stacking fault tetrahedra (SFTs). They found that dislocation motion was obstaclecontrolled when the applied stress was below a critical resolved shear stress (CRSS), otherwise drag-controlled [8]; the dislocation line was found to exhibit a self-affine structure as manifested by non-trivial height-difference correlations of dislocation shapes [9].…”
Section: Introductionmentioning
confidence: 99%
“…Thermal effects can be considered by incorporating Langevin forces into the equations of motion [6][7][8][9]. Rönnpagel et al [6] developed a stochastic model that considers the effects of temperature in a line tension model within Brownian dynamics scheme.…”
We use a discrete dislocation dynamics (DDD) approach to study the motion of a dislocation under strong stochastic forces that may cause bending and roughening of the dislocation line on scales that are comparable to the dislocation core radius. In such situations, which may be relevant in high entropy alloys (HEA) exhibiting strong atomic scale disorder, standard scaling arguments based upon a line tension approximation may be no longer adequate and corrections to scaling need to be considered. We first study the wandering of the dislocation under thermal Langevin forces. This leads to a linear stochastic differential equation which can be exactly solved. From the Fourier modes of the thermalized dislocation line we can directly deduce the scale dependent effective line tension. We then use this information to investigate the wandering of a dislocation in a crystal with spatial, time-independent ('quenched') disorder. We establish the pinning length and show how this length can be used as a predictor of the flow stress. Implications for the determination of flow stresses in HEA from molecular dynamics simulations are discussed.
“…Their simulation system focused on two dimensional problems [6,7]. Hiratani and Zbib [8,9] extended the model proposed by Rönnpagel et al [6] to three-dimensional simulations and used it to simulate dislocation glide through weak obstacles which were represented by stacking fault tetrahedra (SFTs). They found that dislocation motion was obstaclecontrolled when the applied stress was below a critical resolved shear stress (CRSS), otherwise drag-controlled [8]; the dislocation line was found to exhibit a self-affine structure as manifested by non-trivial height-difference correlations of dislocation shapes [9].…”
Section: Introductionmentioning
confidence: 99%
“…Thermal effects can be considered by incorporating Langevin forces into the equations of motion [6][7][8][9]. Rönnpagel et al [6] developed a stochastic model that considers the effects of temperature in a line tension model within Brownian dynamics scheme.…”
We use a discrete dislocation dynamics (DDD) approach to study the motion of a dislocation under strong stochastic forces that may cause bending and roughening of the dislocation line on scales that are comparable to the dislocation core radius. In such situations, which may be relevant in high entropy alloys (HEA) exhibiting strong atomic scale disorder, standard scaling arguments based upon a line tension approximation may be no longer adequate and corrections to scaling need to be considered. We first study the wandering of the dislocation under thermal Langevin forces. This leads to a linear stochastic differential equation which can be exactly solved. From the Fourier modes of the thermalized dislocation line we can directly deduce the scale dependent effective line tension. We then use this information to investigate the wandering of a dislocation in a crystal with spatial, time-independent ('quenched') disorder. We establish the pinning length and show how this length can be used as a predictor of the flow stress. Implications for the determination of flow stresses in HEA from molecular dynamics simulations are discussed.
“…Then, based on the assumption of the Gaussian process, the thermal stress pulse has zero mean and no correlation [29,30] between the two difference times. This leads to the average peak height given as [9,31] …”
“…Therefore, the DD simulation model should also account not only for deterministic effects but also for stochastic forces; leading to a model called "stochastic discrete dislocation dynamics" (SDD) . The procedure is to include the stochastic force Based on the assumption of the Gaussian process, the thermal stress pulse has zero mean and no correlation (Ronnpagel, Streit et al 1993;Raabe 1998) between any two different times.…”
Section: The Stochastic Force and Cross-slipmentioning
confidence: 99%
“…Based on the assumption of the Gaussian process, the thermal stress pulse has zero mean and no correlation (Ronnpagel, Streit et al 1993;Raabe 1998) between any two different times.…”
Section: The Stochastic Force and Cross-slipmentioning
Deformation and strength of crystalline materials are determined to a large extent by underlying mechanisms involving various crystal defects, such as vacancies, interstitials and impurity atoms (point defects), dislocations (line defects), grain boundaries, heterogeneous interfaces and microcracks (planar defects), chemically heterogeneous precipitates, twins and other strain-inducing phase transformations (volume defects). Most often, dislocations define plastic yield and flow behavior, either as the dominant plasticity carriers or through their interactions with the other strain-producing defects. Dislocation as a line defect in a continuum space was first introduced as a mathematical concept in the early 20th century by Voltera (1907) andSomigliana (1914). They considered the elastic properties of a cut in a continuum, corresponding to slip, disclinations, and/or dislocations. But associating these geometric cuts to dislocations in crystalline materials was not made until the year 1934. In order to explain the less than ideal strength of crystalline materials, Orowan (1934), Polanyi (1934 and Taylor (1934) simultaneously hypothesized the existence of dislocation as a crystal defect. Later in the late 50's, the existence of dislocations was experimentally confirmed by Hirsch, et al. (1956) andDash (1957). Presently these crystal defects are routinely observed by various means of electron microscopy.
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