InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range

Brunkov, P. N.; Il’inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus, N. M.; Usikova, A. A.

doi:10.1016/j.infrared.2015.09.017

Cited by 11 publications

(5 citation statements)

References 21 publications

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“…For example, in a heavily doped n + -InAs (Nd = 6 × 10 18 cm −3 ), the BM shift makes the corresponding substrates transparent to the 3.3 μm [121]. In addition, many of the investigations were made in the Ioffe Physical-Technical Institute, see [121][122][123][124], on different antimonide-based ternary and quaternary alloys as a materials for MWIR double heterostructure (DH) photodiodes for near-room temperature operation. These DH devices with about several-μm thick undoped n-InAs1-xSbx active layers and p-InAs1−x−ySbxPy 3-μm-thick Zndoped cladding contact layers are LPE grown on n-type InAs(100) substrates (with n = 2 × 10 16 cm −3 for undoped or n + = 2 × 10 18 cm −3 for the Sn-doped substrates).…”

Section: Technology and Propertiesmentioning

confidence: 99%

“…Chalcogenide Figure 38. DH InAsSb immersion photodiodes: (a) construction of the immersion photodiode (after [121]) and (b) detectivity spectra at different temperatures for InAsSb photodiodes with n-InAs and n + -InAs substrates (after [123]). Figure 39a summarizes the peak detectivity of photodiodes in dependence of temperature.…”

Section: D/d~10mentioning

confidence: 99%

“…The final construction of immersion photodiode is similar to that shown in Figure 38 a [ 123 ]. Figure 38 b shows the Johnson-limited detectivity at different temperatures of InAsSb DH photodiodes with immersion lenses.…”

Section: Inassb Bulk Photodiodesmentioning

confidence: 99%

“… Detectivity of InAsSb DH photodiodes: ( a ) maximum detectivity and peak wavelength versus temperature (after [ 123 ]); ( b ) peak detectivity versus peak wavelength of photodiodes without (BSI) and with Si lenses (IL) (after [ 121 ]). …”

Section: Figurementioning

confidence: 99%

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InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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Section: Technology and Propertiesmentioning

confidence: 99%

Section: D/d~10mentioning

confidence: 99%

Section: Inassb Bulk Photodiodesmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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“…В настоящей работе предлагается новый метод прямых бесконтактных измерений температуры образца с использованием радиационных сенсоров среднего (2−5 µm) ИК-диапазона (MIR-сенсоры) на основе фотодиодов (ФД) A 3 B 5 в качестве чувствительного элемента. Высокая спектральная чувствительность и селективность ( λ/λ m ∼ 0.1), обусловленные использованием flip-chip-конструкции ФД и иммерсионной оптики [11], позволяют использовать для описания их работы в качестве датчика температуры монохроматическую модель на основе закона Планка. функциональную связь фототока ФД (I ph ) с температурой поверхности исследуемого объекта (T ), которая в приближении Вина для λT < 3000 µm • K имеет вид…”

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