2015
DOI: 10.1016/j.infrared.2015.09.017
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InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range

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Cited by 11 publications
(5 citation statements)
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“…For example, in a heavily doped n + -InAs (Nd = 6 × 10 18 cm −3 ), the BM shift makes the corresponding substrates transparent to the 3.3 μm [121]. In addition, many of the investigations were made in the Ioffe Physical-Technical Institute, see [121][122][123][124], on different antimonide-based ternary and quaternary alloys as a materials for MWIR double heterostructure (DH) photodiodes for near-room temperature operation. These DH devices with about several-μm thick undoped n-InAs1-xSbx active layers and p-InAs1−x−ySbxPy 3-μm-thick Zndoped cladding contact layers are LPE grown on n-type InAs(100) substrates (with n = 2 × 10 16 cm −3 for undoped or n + = 2 × 10 18 cm −3 for the Sn-doped substrates).…”
Section: Technology and Propertiesmentioning
confidence: 99%
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“…For example, in a heavily doped n + -InAs (Nd = 6 × 10 18 cm −3 ), the BM shift makes the corresponding substrates transparent to the 3.3 μm [121]. In addition, many of the investigations were made in the Ioffe Physical-Technical Institute, see [121][122][123][124], on different antimonide-based ternary and quaternary alloys as a materials for MWIR double heterostructure (DH) photodiodes for near-room temperature operation. These DH devices with about several-μm thick undoped n-InAs1-xSbx active layers and p-InAs1−x−ySbxPy 3-μm-thick Zndoped cladding contact layers are LPE grown on n-type InAs(100) substrates (with n = 2 × 10 16 cm −3 for undoped or n + = 2 × 10 18 cm −3 for the Sn-doped substrates).…”
Section: Technology and Propertiesmentioning
confidence: 99%
“…Chalcogenide Figure 38. DH InAsSb immersion photodiodes: (a) construction of the immersion photodiode (after [121]) and (b) detectivity spectra at different temperatures for InAsSb photodiodes with n-InAs and n + -InAs substrates (after [123]). Figure 39a summarizes the peak detectivity of photodiodes in dependence of temperature.…”
Section: D/d~10mentioning
confidence: 99%
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“…В настоящей работе предлагается новый метод прямых бесконтактных измерений температуры образца с использованием радиационных сенсоров среднего (2−5 µm) ИК-диапазона (MIR-сенсоры) на основе фотодиодов (ФД) A 3 B 5 в качестве чувствительного элемента. Высокая спектральная чувствительность и селективность ( λ/λ m ∼ 0.1), обусловленные использованием flip-chip-конструкции ФД и иммерсионной оптики [11], позволяют использовать для описания их работы в качестве датчика температуры монохроматическую модель на основе закона Планка. функциональную связь фототока ФД (I ph ) с температурой поверхности исследуемого объекта (T ), которая в приближении Вина для λT < 3000 µm • K имеет вид…”
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