InAsSb-based mid-infrared lasers (3.8–3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition

Allerman, Andrew A.; Biefeld, R. M.; Kurtz, S. R.

doi:10.1063/1.118141

Cited by 76 publications

(36 citation statements)

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“…Simple p-n homojunctions are incapable of achieving the requisite carrier modulations and hence we turn instead to heterojunction designs adapted from existing light-emitting diodes (LEDs) and laser devices. [46][47][48] Our heterojunction structure comprises aintrinsic InSb (470 nm) active region stacked between thin (30 nm) electron and hole blocking layers made of p-type and n-type In 0.8 Al 0.2 Sb (lattice matched), respectively ( Figure 4 A). The device stack is completed by a p-type (10 18 cm −3 ) InSb hole source.…”

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confidence: 99%

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Iyer

Pendharkar

Schuller

2016

Advanced Optical Materials

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paradigm in reconfi gurable metasurfacebased optics. Here, we use electromagnetics and device simulations to design electrically pumped semiconductor heterostructure resonators capable of arbitrarily tuning the refl ection phase of infrared light with little change in amplitude.Previous approaches for tuning metasurfaces-using metallic resonators coupled to an index tunable background [ 8,[23][24][25][26][27][28] or mechanically changing the shape of metallic resonators [ 5,29,30 ] have been unable to achieve reconfi gurable 2π phase shifts. This inability to achieve 2π phase control stems fundamentally from the nature of the underlying optical antennas. Because the light-matter interaction lengths are subwavelength and the quality factors modest ( Q ≈ 1−10), very large refractive index modulation is needed (Δ n ≥ 1). InSb [31][32][33] or InAs [ 27,34,35 ] support free-carrier index shifts of this magnitude due to their high mobility and low electron effective mass. In our previous theory work, [ 36 ] we demonstrated full 2π tuning of the transmission phase of semiconductor metasurface by modulating the carrier concentration in InSb resonators between 10 17 -10 18 cm −3 . However, we did not consider how to achieve such modulation. Here, we use combined electromagnetic [ 37 ] and device simulations to demonstrate subwavelength 1D heterojunction device resonators with electrically reconfi gurable refl ection phase. We fi rst demonstrate a new resonator geometry that allows for integration of metal electrodes with dielectric-type Mie resonances. Subsequently, we incorporate an InSb based heterojunction device layer into the resonator architecture. This novel device design employs electron and hole blocking layers to achieve large modulations of carrier concentration over electrically large dimensions, enabling near-2π tuning of refl ection phase with minimal changes in refl ection amplitude. Finally, we demonstrate fully continuous and tunable steering of high-quality narrow, diffraction lobes in resonator arrays. Results and DiscussionGiven the need for integrating top and bottom electrical contacts, our basic metasurface element is a modifi ed version of a 1D "strip" resonator sitting atop a refl ecting back electrode shown in

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confidence: 99%

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Iyer

Pendharkar

Schuller

2016

Advanced Optical Materials

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“…1,2 Heterostructures based on InAsSb alloys, such as InAs/ InAsSb, InAsSb/ InAsPSb, InAsSb/ InGaSb, and so on, have been widely applied as the active medium for mid-IR optoelectronic devices. [3][4][5][6] The InAsSb/ InAs multiple quantum well ͑MQW͒ system is appropriate for use in the active region of 3 -5 m lightemitting diodes that could be deployed in portable gas analyzers and which are important for environmental protection. 6 In this letter we report on a series of InAsSb/ InAs multiple quantum well samples grown by molecular beam epitaxy ͑MBE͒ on InAs substrates.…”

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Photoluminescence and bowing parameters of InAsSb∕InAs multiple quantum wells grown by molecular beam epitaxy

Liu

Tsai

Lin

et al. 2006

Applied Physics Letters

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Detailed studies are reported on the photoluminescence of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be in the ratio of 4:6. For a sample with Sb composition ϳ0.12 in the quantum well the photoluminescence emission band covers the CO 2 absorption peak making it suitable for use in sources for CO 2 detection. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2388879͔Among the family of bulk III-V compound semiconductors the InAsSb alloy system has the lowest band gap energy ͑E g = 0.145 eV at x = 0.634͒ and is thus an important material for mid-IR devices. 1,2 Heterostructures based on InAsSb alloys, such as InAs/ InAsSb, InAsSb/ InAsPSb, InAsSb/ InGaSb, and so on, have been widely applied as the active medium for mid-IR optoelectronic devices. [3][4][5][6] The InAsSb/ InAs multiple quantum well ͑MQW͒ system is appropriate for use in the active region of 3 -5 m lightemitting diodes that could be deployed in portable gas analyzers and which are important for environmental protection. 6 In this letter we report on a series of InAsSb/ InAs multiple quantum well samples grown by molecular beam epitaxy ͑MBE͒ on InAs substrates. Photoluminescence ͑PL͒ spectroscopy measurements were undertaken to investigate the dependence of emission wavelength on composition and also to gain information about the conduction band and valence band bowing parameters. The transition energies of the above-mentioned samples lie within the range of 0.2-0.4 eV ͑3-5 m͒.The InAsSb/ InAs MQW samples were grown on ͑100͒ n + -InAs substrates using a VG-V80H MBE system. Two cracker cells were used to provide the Sb and As 2 beams. A thermal effusion K cell was used to provide the In flux. An InAs buffer layer with a thickness of 100 nm was grown at 480°C. Then a seven-period InAsSb/ InAs MQW with various Sb compositions was grown at 450°C. The thickness of the InAsSb well and InAs barrier were 7 and 50 nm, respectively. In situ reflection high energy electron diffraction ͑RHEED͒ was used to monitor surface reconstruction. After growth the samples were characterized using double crystal x-ray diffraction ͑DXRD͒ and PL to study their structural and optical properties. Figure 1 shows the DXRD spectra of the InAsSb/ InAs MQW samples. During the growth of the MQWs, the in situ RHEED pattern showed a clear 4 ϫ 2 reconstruction when InAs was deposited and became slightly blurry when InAsSb was deposited. This implies a rougher growing surface when the Sb beam was incident. For samples with a higher Sb composition, only bulk lines were observed and we believe that this may result from the stress caused by lattice mismatch. However, the satellite peaks in the DXRD sp...

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“…A semimetal occurs for a InAs/GaSb SLS where the conduction band of InAs is below the valence band of GaAsSb. We have taken advantage of the band offsets in the GaAsSb (p) I InAs (n) heterojunction to design an alternative injection scheme as well as multi-stage devices [7,8]. In our devices, the semimetal acts as an internal electron/hole source that can eliminate many of the problems associated with electron injection in these devices, and this novel device is compatible with MOCVD materials and background doping.…”

Section: Band Offset Effects On Sls Energy Levelsmentioning

confidence: 96%

Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials

Biefeld¹,

Kurtz²

2001

Infrared Detectors and Emitters: Materials and Devices

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The unique properties of the semiconductor material lnAsSb make it of interest for a variety of applications in the infrared. lnAsSb has the smallest bandgap of any of the standard III-V alloys (excluding those containing Bi and T1) with a value of 0.145 eV at 0 K for lnAso.37Sbo.63 (see Fig. 1). Because lnAsSb has the smallest bandgap of any III-V semiconductor, it may offer the limit in III-V device performance in terms of speed, long wavelength for optoelectronics, and quantum effects related to low effective mass. These properties, together with advances in III-V growth and processing technologies, have resulted in increased effort in research and development of InAsSb material and devices.The range of bandgap energies available in the lnAsSb ternary system make it suitable for use in midwave (3 to 6 J.lm) and far infrared (> 6 J.lID) devices. The bandgap and lattice constant for lnAsSb are shown in Fig. 1. Figure 1 is based on data obtained from material grown at high temperature, primarily from the melt or liquid phase [1]. There is a large variation of the lattice constant for InAsSb with composition, and the lattice constant is approximately linear with composition (Vegard's Law). For lnAsl-xSbx, the composition dependence of the bandgap at T= 0 K obeys an expression of the form of equation (1).Eg (1-x}The bandgap decrease between 0 K and 300 K is estimated as 60 meV throughout the InAsSb system. InAsSb has a zincblende crystal structure

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InAsSb-based mid-infrared lasers (3.8–3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition

Cited by 76 publications

References 1 publication

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators

Photoluminescence and bowing parameters of InAsSb∕InAs multiple quantum wells grown by molecular beam epitaxy

Growth, Properties and Infrared Device Characteristics of Strained InAsSb-Based Materials

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