InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

Tsai, Gene; Wang, Delun; Wu, Chi-Fang; Lin, Yu Ting; Lin, Hao‐Hsiung

doi:10.1016/j.jcrysgro.2006.09.010

Cited by 11 publications

(15 citation statements)

References 16 publications

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“…The optical quality of the sample surface was found to be improved by using an increased concentration of arsenic during growth. X-ray diffraction analysis revealed evidence of spinodal decomposition which has been described in detail in our previous publication [19].…”

Section: Samplesupporting

confidence: 62%

“…However, previous Raman studies on III-V quaternaries have focussed more on gallium containing compounds, such as GaInAsSb [16][17]. Whereas photoluminsence of InAsSbP has been extensively studied [18][19], vibrational studies are rare and limited to a small range of compositions [20][21]. Here we report on the detailed Raman spectroscopy of InAsPSb across a wide composition range.…”

Section: Introductionmentioning

confidence: 99%

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Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Cheetham¹,

Krier²,

Patel³

et al. 2011

J. Phys. D: Appl. Phys.

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The Raman spectra of quaternary InAs x Sb y P1−x−y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.

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Section: Samplesupporting

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Cheetham¹,

Krier²,

Patel³

et al. 2011

J. Phys. D: Appl. Phys.

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“…13,14 Phase separation in MOCVD material has also been observed, 12 where it was further noted that layers grown more than 2-3 lm thick were plagued with high defect densities, 17 and that material grown directly on GaSb substrates had very poor surface morphologies. 13,14 Phase separation in MOCVD material has also been observed, 12 where it was further noted that layers grown more than 2-3 lm thick were plagued with high defect densities, 17 and that material grown directly on GaSb substrates had very poor surface morphologies.…”

Section: Discussionmentioning

confidence: 98%

“…Despite this, a number of studies have reported on the growth of InPSb by metalorganic chemical vapor deposition (MOCVD), [9][10][11][12] while only a few reports have appeared for growth by molecular beam epitaxy (MBE) of InPSb or InAsPSb. 13,14 Since the growth of the required high-purity AlAsSb nBn barrier material by MOCVD is difficult in comparison to growth by MBE, 15 there is reason for further investigation of In(As)PSb growth by MBE for this device application. We report the MBE growth of InPSb and InAsPSb and characteristics of nBn photodetectors employing these alloys as active region materials.…”

Section: Introductionmentioning

confidence: 99%

GaSb-based infrared detectors utilizing InAsPSb absorbers

Klem

Hawkins

Kim

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inEffect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers InPSb and InAsPSb have been investigated for use as absorber materials in GaSb-based n-type/ barrier/n-type (nBn) detectors with cutoff wavelengths shorter than 4.2 lm. The growth temperature window for high-quality InPSb lattice-matched to GaSb by molecular beam epitaxy is approximately 440-460 C. InPSb films with thicknesses greater than approximately 1 lm or films grown outside this temperature window have high densities of large defects, with films grown at lower temperatures exhibiting evidence of significant phase separation. In contrast, InAsPSb films can be grown with excellent surface morphologies and no apparent phase separation over a wide temperature range. InAsPSb samples with low-temperature photoluminescence between 3.0 and 3.4 lm and lattice mismatch of less than 1 Â 10 À3 have been grown, although both photoluminescence and x-ray diffraction data exhibit peak splitting indicative of compositional nonuniformity. AlAsSb-barrier nBn detectors with InPSb and InAsPSb absorbers have been fabricated. At 160 K, InPSb-absorber devices have a photocurrent responsivity edge at approximately 2.8 lm and a dark current of approximately 1.4 Â 10 À7 A/cm 2 , and InAsPSb devices with responsivity edges of 3.1-3.2 lm have a dark current of 2.3 Â 10 À8 A/cm 2 . Both InPSb and InAsPSb devices require significant reverse bias for full photocurrent collection at low temperature, suggesting the existence of an undesirable valence band energy discontinuity. The temperature dependence of dark current indicates that it is dominated by a mechanism other than generation in the undepleted absorber region.

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“…We chose the composition of the quaternary barrier carefully in order to avoid the problems of immiscibility and compositional disorder. 7 We then used a Bede D1 high-resolution x-ray diffractometer ͑HRXRD͒ to analyze the MQWs. In Fig.…”

mentioning

confidence: 99%

Band alignment of InAs1−xSbx (0.05<x<0.13)/InAs0.67P0.23Sb0.10 heterostructures

Tsai

Lin

2009

Appl. Phys. Lett.

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InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

Cited by 11 publications

References 16 publications

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

GaSb-based infrared detectors utilizing InAsPSb absorbers

Band alignment of InAs1−xSbx (0.05<x<0.13)/InAs0.67P0.23Sb0.10 heterostructures

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InAsPSb quaternary alloy grown by gas source molecular beam epitaxy

Cited by 11 publications

References 16 publications

Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE

Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE

GaSb-based infrared detectors utilizing InAsPSb absorbers

Band alignment of InAs1−xSbx (0.05<x<0.13)/InAs0.67P0.23Sb0.10 heterostructures

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Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE

Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE