InAs(Sb) quantum dots grown on GaAs by MBE

Abstract

The MBE growth of InAs(Sb)/GaAs quantum dots is investigated. Photoluminescence shows a slight redshift of the emission wavelength from 1.15 to 1.24 µm (InAs 0.95 Sb 0.05 dots). Attempts to incorporate higher concentrations of antimony lead to a poor optical quality and, occasionally, to a blue-shift. Transmission electron microscopy observations are discussed considering the surfactant effect of antimony.

Effects of thermal emission and re-trapping of photo-injected carriers on the optical transitions of InAs/GaAs quantum dots

“…The studied structure in this work contains a single InAs QD layer sandwiched in a GaAs matrix [18]. Stranski-Krastanov InAs QDs were grown on a semi-insulating GaAs (001)-oriented by conventional solid source MBE.…”

Surface morphology and photoluminescence studies of Sb-doped ZnO layers grown using MOCVD

“…On sapphire, the antimony permit to smooth the surface of the layers, and we assume that Sb plays a role of surfactant during the growth. This has commonly been observed during the growth of III-V materials [11]. Therefore we point out some beneficial effect of the antimony flow on the growth mode.…”