InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers

Ye, Zhengmao; Campbell, Joe C.; Chen, Zhonghui; Kim, Eui‐Tae; Madhukar, A.

doi:10.1063/1.1517750

Cited by 92 publications

(49 citation statements)

References 16 publications

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“…InAs quantum dots (QDs) embedded in GaAs quantum well structures have initiated considerable research activities in the recent years 1,2,3,4,5,6,7,8,9,10,11,12,13,14 . The interest in QDs is mainly based on the favorable energy spacing of their bound electronic states and the great potential to adjust these properties.…”

Section: Introductionmentioning

confidence: 99%

“…The IR photoresponse of InAs dots embedded in GaAs was investigated very recently 1,2,3,4,5,6,7,8,9 and transition energies between the dot ground state and the GaAs conduction band were found in the 100-400 meV range. Depending on the dot potential shape and the doping level, photodetection can even be extended into the region below 100 meV 21,22 .…”

Section: Introductionmentioning

confidence: 99%

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Intraband transitions in quantum dot–superlattice heterostructures

et al. 2005

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By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Intraband transitions in quantum dot–superlattice heterostructures

et al. 2005

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“…There have been indeed several studies of photo-detectors based on InAs QDs (see e.g., [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50])…”

Section: Photo-detectionmentioning

confidence: 99%

Unbound states in quantum heterostructures

Ferreira¹,

Bastard²

2006

Nanoscale Res Lett

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We report in this review on the electronic continuum states of semiconductor Quantum Wells and Quantum Dots and highlight the decisive part played by the virtual bound states in the optical properties of these structures. The two particles continuum states of Quantum Dots control the decoherence of the excited electron -hole states. The part played by Auger scattering in Quantum Dots is also discussed.

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“…In addition, QDIPs are expected to show improved performance characteristics such as low dark current and higher operating temperatures [2,[7][8][9][10]. In a quantum dots-in-a-well (DWELL) structure, the InAs dots are placed in a thin InGaAs quantum well, which in turn is positioned in a GaAs matrix [5].…”

Section: Quantum Dots-in-a-well Infrared Detectorsmentioning

confidence: 99%

Quantum structures for multiband photon detection

Perera

2006

Opto-Electronics Review

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The work describes multiband photon detectors based on semiconductor micro-and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and internal photoemission play the dominant role in homo or heterojunction detectors. Quantum dots-in-a-well (DWELL) detectors can tailor the response wavelength by varying the size of the well. A tunnelling quantum dot infrared photodetector (T-QDIP) could operate at room temperature by blocking the dark current except in the case of resonance. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunnelling, while the dark current is blocked by AlGaAs/InGaAs tunnelling barriers placed in the structure. A two-colour infrared detector with photoresponse peaks at ∼6 and ∼17 μm at room temperature will be discussed. A homojunction or heterojunction interfacial workfunction internal photoemission (HIWIP or HEIWIP) infrared detector, formed by a doped emitter layer, and an intrinsic layer acting as the barrier followed by another highly doped contact layer, can detect near infrared (NIR) photons due to interband transitions and mid/far infrared (MIR/FIR) radiation due to intraband transitions. The threshold wavelength of the interband response depends on the band gap of the barrier material, and the MIR/FIR response due to intraband transitions can be tailored by adjusting the band offset between the emitter and the barrier. GaAs/AlGaAs will provide NIR and MIR/FIR dual band response, and with GaN/AlGaN structures the detection capability can be extended into the ultraviolet region. These detectors are useful in numerous applications such as environmental monitoring, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.

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InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers

Cited by 92 publications

References 16 publications

Intraband transitions in quantum dot–superlattice heterostructures

Intraband transitions in quantum dot–superlattice heterostructures

Unbound states in quantum heterostructures

Quantum structures for multiband photon detection

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