InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition

Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots

“…2,3 Being an indirect semiconductor, GaP cannot serve as active medium for efficient photonic devices. Consequently, several studies of InGaAs [4][5][6][7][8] and InGaAsN 9 QDs on GaP have been published during the last years, including an InGaAs/GaP QD light emitting diode on Si substrate. 10 The extreme lattice mismatch of 11.2% between InAs and GaP on the one hand represents a challenge for the growth of dislocation-free QD structures.…”